k9f5608u0m-yib0 Samsung Semiconductor, Inc., k9f5608u0m-yib0 Datasheet - Page 4

• Manufacturer Part Number: k9f5608u0m-yib0
• Description: Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

PRODUCT INTRODUCTION
K9F5608U0M-YCB0,K9F5608U0M-YIB0
The K9F5608U0M is a 264Mbit(276,824,064 bit) memory organized as 65,536 rows(pages) by 528 columns. Spare sixteen columns
are located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data
transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16
cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of the 32
pages formed by two NAND structures, totaling 8,448 NAND structures of 16 cells. The array organization is shown in Figure 2. The
program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory
array consists of 2,048 separately erasable 16K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the
K9F5608U0M.
The K9F5608U0M has addresses multiplexed into 8 I/O s. This scheme dramatically reduces pin counts and allows systems
upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through
I/O s by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address
Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one bus cycle
except for Block Erase command which requires two cycles: one cycle for erase-setup and another for erase-execution after block
address loading. The 32M byte physical space requires 25 addresses, thereby requiring three cycles for byte-level addressing: col-
umn address, low row address and high row address, in that order. Page Read and Page Program need the same three address
cycles following the required command input. In Block Erase operation, however, only the two row address cycles are used. Device
operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of the
K9F5608U0M.
Table 1. COMMAND SETS
NOTE : 1. The 00h command defines starting address of the 1st half of registers.
Read 1
Read 2
Read ID
Reset
Page Program
Block Erase
Read Status
2. The 50h command is valid only when the GND inout (pin # 6) is low level.
The 01h command defines starting address of the 2nd half of registers.
After data access on the 2nd half of register by the 01h command, the status pointer is
automatically moved to the 1st half register(00h) on the next cycle.
Function
1st. Cycle
00h/01h
50h
90h
FFh
80h
60h
70h
(2)
(1)
4
2nd. Cycle
D0h
10h
-
-
-
-
-
Acceptable Command during Busy
FLASH MEMORY
O
O