NBSG11 ON Semiconductor, NBSG11 Datasheet - Page 6

• Manufacturer Part Number: NBSG11
• Manufacturer: ON Semiconductor

NOTE: SiGe circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
18. Input and output parameters vary 1:1 with V
19. All loading with 50 W to V
20. V
21. V
22. V
*Typicals used for testing purposes.
**The device packaged in FCBGA-16 have maximum temperature specification of 70 C and devices packaged in QFN-16 have maximum
23. Measured using a 500 mV source, 50% duty cycle clock source. All loading with 50 W to V
24. See Figure 5. t
25. Within-Device skew is defined as identical transitions on similar paths through a device.
26. Device-to-device skew for identical transitions at identical V
27. V
Table 7. DC CHARACTERISTICS, NECL OR RSNECL INPUT WITH NECL OUTPUT
V
Table 8. AC CHARACTERISTICS for FCBGA-16
V
temperature specification of 85 C.
I
VOH
V
V
V
V
R
I
I
f
t
t
t
t
V
t
t
Symbol
EE
IH
IL
Symbol
max
PLH
PHL
SKEW
JITTER
r
f
CC
CC
OUTPP
IH
IL
IHCMR
INPP
TIN
input signal.
output amplitude is approximately 200 mV (as shown in Figure 4, where output P-P spec is shown as a minimum/guarantee of around
150 mV). Input edge rates 40 ps (20% - 80%).
IHCMR
IH
IL
INPP
,
= 0 V; V
= 0 V; V
always
cannot exceed V
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
(MAX) cannot exceed V
min varies 1:1 with V
Negative Power Supply Current
Output HIGH Voltage (Note 19)
Output Amplitude Voltage
Input HIGH Voltage (Single-Ended)
(Note 21)
Input LOW Voltage (Single-Ended) (Note 22)
Input HIGH Voltage Common Mode Range
(Differential Configuration) (Note 20)
Internal Input Termination Resistor
Input HIGH Current (@ V
Input LOW Current (@ V
EE
EE
Maximum Frequency
(See Figure 4. F
Propagation Delay to
Output Differential
Duty Cycle Skew (Note 24)
Within-Device Skew (Note 25)
Device-to-Device Skew (Note 26)
RMS Random Clock Jitter
Peak-to-Peak Data Dependent Jitter
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 27)
Output Rise/Fall Times
(20% - 80%) @ 1 GHz
V
= -3.465 V to -2.375 V (Note 18)
= -3.465 V to -2.375 V or V
EE
SKEW
.
CC
= |t
.
Characteristic
PLH
Characteristic
CC
max
EE
- 2.0 V. V
- t
/JITTER) (Note 23)
CC
, V
PHL
IHCMR
- V
| for a nominal 50% Differential Clock Input Waveform.
IL
IH
, V
EE
, V
OH
ILMIN
.
IHMAX
max varies 1:1 with V
f
f
in
/V
in
CC
< 10 Gb/s
< 10 GHz
OL
CC
)
)
measured at V
= 2.375 V to 3.465 V; V
.
Q, Q
10.709
http://onsemi.com
Min
90
75
20
-1050
V
1435
2.5 V
V
Min
350
mV
45
CC
45
IH
CC
CC
V
IH
NBSG11
-
EE
-
/V
-40 C
. The V
levels.
TBD
+1.2
IL
Typ
125
0.2
12
25
30
-40 C
6
.
3
6
V
V
-970
1000
1400
mV*
mV*
Typ
410
60
CC
CC
50
80
25
EE
IHCMR
-
-
2600
= 0 V
Max
160
15
15
50
55
1
-925
V
Max
V
525
150
150
100
mV
0.0
75
55
IH
CC
range is referenced to the most positive side of the differential
-
10.709
Min
90
75
20
V
2.5 V
-975
1435
V
Min
350
mV
45
CC
45
IH
V
-
EE
-
CC
25 C
TBD
+1.2
Typ
125
-2.0 V. For minimum f
0.2
12
25
30
25 C
3
6
V
V
-935
1000
1400
mV*
mV*
Typ
410
60
CC
CC
50
80
25
-
-
2600
Max
160
15
15
50
55
1
-900
V
Max
V
525
150
150
100
mV
0.0
75
55
IH
CC
-
10.709
Min
90
75
20
70 C(BGA)/85 C(QFN)**
V
-950
1435
2.5 V
V
Min
350
mV
45
CC
45
IH
V
max
-
-
EE
70 C
TBD
Typ
125
0.2
+1.2
12
25
30
value of 10.709 GHz,
3
6
V
V
-910
1000
1400
mV*
mV*
Typ
410
60
CC
CC
50
80
25
-
-
2600
Max
160
15
15
50
55
1
-875
V
Max
V
525
150
150
100
mV
0.0
75
55
IH
CC
Unit
GHz
-
mV
ps
ps
ps
ps
Unit
mA
mV
mV
mA
mA
W
V
V
V