k6f2016u4d Samsung Semiconductor, Inc., k6f2016u4d Datasheet - Page 4

• Manufacturer Part Number: k6f2016u4d
• Description: 128k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6F2016U4D Family
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. T
2. Overshoot: Vcc+2.0V in case of pulse width 20ns.
3. Undershoot: -2.0V in case of pulse width 20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
1. Super low power product=3 A with special handling
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
A
=-40 to 85 C, otherwise specified.
Item
Item
Item
1)
(f=1MHz, T
Symbol
A
I
I
V
V
I
I
I
I
CC1
CC2
SB1
I
CC
=25 C)
LO
SB
LI
OH
OL
Symbol
V
CS=V
I
Cycle time=1 s, 100%duty, I
Cycle time=Min, I
I
I
CS=V
CS Vcc-0.2V or LB=UB Vcc-0.2V, CS 0.2V, Other inputs=0~Vcc
C
C
IO
OL
OH
IN
IN
IO
=0mA, CS=V
=Vss to Vcc
= 2.1mA
= -1.0mA
IH
IH
or OE=V
or LB=UB=V
Symbol
IO
IL
Vcc
Vss
=0mA
V
V
IH
, V
Test Condition
IH
IL
or WE=V
IN
Test Conditions
IH
=V
IO
V
V
,
- 4 -
, Other inputs=V
=0mA, CS 0.2V, V
100% duty, CS=V
IN
IO
IH
=0V
=0V
1)
or V
IL
, V
IL
IO
=Vss to Vcc
-0.2
Min
2.7
2.2
0
IN
IL,
IH
3)
0.2V or V
V
or V
IN
=V
IL
IH
IN
Min
or V
-
-
V
CC
Typ
3.0
-0.2V
IL
0
-
-
Min
2.4
-1
-1
Vcc+0.2
CMOS SRAM
-
-
-
-
-
-
Max
10
8
Max
3.3
0.6
0
Typ
0.5
-
-
-
-
-
-
-
-
2)
Max
10
0.4
0.3
Revision 1.0
35
1
1
2
4
-
1)
Unit
Unit
May 2000
pF
pF
V
V
V
V
Unit
mA
mA
mA
mA
V
V
A
A
A