k6f2016u4e-f Samsung Semiconductor, Inc., k6f2016u4e-f Datasheet - Page 2

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k6f2016u4e-f

Manufacturer Part Number
k6f2016u4e-f
Description
128k X16 Bit Super Low Power And Low Voltage Full Cmos Static Ram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
PIN DESCRIPTION
K6F2016U4E Family
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical values are measured at V
I/O
CS
Process Technology: Full CMOS
Organization: 128K x16 bit
Power Supply Voltage: 2.7~3.3V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 48-TBGA-6.00x7.00
Product Family
A
K6F2016U4E-F
Name
G
C
D
H
A
B
E
F
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice
0
1
WE
1
OE
~A
~I/O
, CS
16
16
2
I/O10
I/O15
I/O16
DNU
I/O9
Vss
Vcc
LB
1
Chip Select Inputs
Output Enable Input
Write Enable Input
Address Inputs
Data Inputs/Outputs
48-TBGA: Top View (Ball Down)
Function
I/O11
I/O12
I/O13
I/O14
DNU
OE
UB
A8
2
Operating Temperature
Industrial(-40~85 C)
DNU
DNU
A14
A12
A0
A3
A5
A9
3
CC
=3.0V, T
A16
A15
A13
A10
A1
A4
A6
A7
4
Name
DNU
Vcc
Vss
UB
LB
A
=25 C and not 100% tested.
CS1
I/O2
I/O4
I/O5
I/O6
A11
WE
A2
5
Power
Ground
Upper Byte(I/O
Lower Byte(I/O
Do Not Use
Vcc Range
DNU
DNU
I/O1
I/O3
I/O7
I/O8
Vcc
Vss
2.7~3.3V
6
Function
9
1
~
~
16
8
)
55
)
- 2 -
Speed
1)
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced full CMOS process technology. The families support
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The families also support
low data retention voltage for battery back-up operation with
low data retention current.
/70ns
I/O
The K6F2016U4E families are fabricated by SAMSUNG s
9
~I/O
I/O
Row
Addresses
16
1
~I/O
WE
OE
CS
UB
LB
8
(I
Standby
SB1
0.5 A
Control Logic
Power Dissipation
, Typ.)
2)
Clk gen.
Data
cont
Data
cont
Data
cont
Row
select
(I
Operating
CC1
2mA
, Max)
CMOS SRAM
Precharge circuit.
Column Addresses
Memory array
1024 rows
128
Column select
48-TBGA-6.00x7.00
I/O Circuit
16 columns
September 2001
PKG Type
Revision 2.0
Vcc
Vss
.

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