ao4406al Alpha & Omega Semiconductor, ao4406al Datasheet - Page 2

• Manufacturer Part Number: ao4406al
• Description: 30v N-channel Mosfet
• Manufacturer: Alpha & Omega Semiconductor

AO4406AL
Alpha & Omega Semiconductor, Ltd.
A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation P
C. Repetitive rating, pulse width limited by junction temperature T
initialT
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2oz. Copper, assuming a maximum junction temperature of T
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
Symbol
STATIC PARAMETERS
BV
I
I
V
I
R
g
V
I
DYNAMIC PARAMETERS
C
C
C
R
SWITCHING PARAMETERS
Q
Q
Q
Q
t
t
t
t
t
Q
DSS
GSS
D(ON)
S
D(on)
r
D(off)
f
rr
FS
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
g
gs
gd
rr
(10V)
(4.5V)
DSS
Rev 1 : Jun-09
J
=25° C.
JA
is the sum of the thermal impedence from junction to lead R
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
JA
is measured with the device mounted on 1in
D
is based on T
Parameter
J
=25° C unless otherwise noted)
J(MAX)
=150° C, using ≤ 10s junction-to-ambient thermal resistance.
J(MAX)
Conditions
I
V
V
V
V
V
V
V
I
V
V
V
V
R
I
D
S
F
F
2
DS
DS
DS
GS
GS
GS
DS
GS
GS
GS
GS
=12A, dI/dt=500A/ s
=12A, dI/dt=500A/ s
J(MAX)
=250 A, V
=1A,V
GEN
FR-4 board with 2oz. Copper, in a still air environment with T
=150° C. The SOA curve provides a single pulse ratin g.
=30V, V
=0V, V
=V
=5V, I
=10V, V
=10V, I
=4.5V, I
=0V, V
=0V, V
=10V, V
=10V, V
=3
=150° C. Ratings are based on low frequency and duty cycles to keep
GS
JL
GS
and lead to ambient.
I
D
=0V
D
GS
DS
DS
=12A
D
=250 A
D
GS
DS
DS
DS
=12A
GS
=10A
= ±20V
=15V, f=1MHz
=0V, f=1MHz
=0V
=5V
=15V, I
=15V, R
=0V
D
=12A
L
T
=1.25 ,
T
J
=125° C
J
=55° C
Min
100
610
1.5
0.8
1.9
1.8
5.6
6.4
30
88
40
11
5
12.5
0.75
Typ
760
125
14
1.9
9.5
1.6
6.6
2.4
4.4
45
70
14
17
3
9
6
7
8
2
www.aosmd.com
A
FR-4 board with
Max
11.5
15.5
100
910
160
100
=25° C. The
17
2.5
2.4
2.9
4.2
9.6
17
5
1
1
4
8
8
Units
m
m
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
S
V
A
A