upa2720agr-e2-at Renesas Electronics Corporation., upa2720agr-e2-at Datasheet

upa2720agr-e2-at

Manufacturer Part Number

upa2720agr-e2-at

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2720AGR-E2-AT.pdf (6 pages)

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Document No. G18704EJ2V0DS00 (2nd edition)

Date Published October 2008 NS

Printed in Japan

FEATURES

• Low on-state resistance

• Low input capacitance

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)

• RoHS Compliant

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external electrode and other parts.)

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

DESCRIPTION

designed for power management applications of a notebook

computer and Lithium-Ion battery protection circuit.

Notes 1. PW ≤ 10

The

iss

DS(on)1

DS(on)2

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

PA2720AGR-E1-AT

PA2720AGR-E2-AT

= 3600 pF TYP. (V

2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

3. Starting T

PA2720AGR is N-channel MOS Field Effect Transistor

PART NUMBER

= 6.6 mΩ MAX. (V

= 14 mΩ MAX. (V

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note

Note2

Note3

= 10 V, V

= 0 V)

= 5.0 V, I

= 10 V, I

= 15 V, R

N-CHANNEL POWER MOSFET

LEAD PLATING

= 0 V)

Pure Sn

Note2

The mark <R> shows major revised points.

= 7 A)

= 25°C, All terminals are connected.)

= 25 Ω, V

DATA SHEET

D(DC)

D(pulse)

stg

DSS

GSS

SWITCHING

Tape 2500 p/reel

= 20 → 0 V, L = 100

MOS FIELD EFFECT TRANSISTOR

PACKING

−55 to +150

±150

19.6

±20

±14

150

1.1

2.5

PACKAGE DRAWING (Unit: mm)

5.37 MAX.

°C

PA2720AGR

Power SOP8

0.08 g TYP.

0.40

PACKAGE

1.27

+0.10

–0.05

0.78 MAX.

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1, 2, 3

5, 6, 7, 8: Drain

0.5 ±0.2

6.0 ±0.3

4.4

: Source

: Gate

Source

Drain

Body

Diode

0.8

2007, 2008

0.10

Related parts for upa2720agr-e2-at

upa2720agr-e2-at Summary of contents

Page 1

N-CHANNEL POWER MOSFET DESCRIPTION The μ PA2720AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. FEATURES • Low on-state resistance R = 6.6 mΩ MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance ...

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upa2720agr-e2-at Renesas Electronics Corporation., upa2720agr-e2-at Datasheet

upa2720agr-e2-at

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