upa2707gr-e2-a Renesas Electronics Corporation., upa2707gr-e2-a Datasheet

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upa2707gr-e2-a

Manufacturer Part Number
upa2707gr-e2-a
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2707GR-E2-A.pdf (7 pages)
Document No. G17032EJ1V0DS00 (1st edition)
Date Published June 2005 NS CP(K)
Printed in Japan
• Low on-state resistance
• Low C
• Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10
THERMAL RESISTANCE
Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
DESCRIPTION
Transistor designed for DC/DC converter and power
management applications of notebook computer.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation (PW = 10 sec)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Channel to Ambient
Channel to Drain Lead
The
R
R
DS(on)1
DS(on)2
µ
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
3. Starting T
iss
PA2707GR is N-channel MOS Field Effect
= 4.3 mΩ MAX. (V
= 5.6 mΩ MAX. (V
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 6600 pF TYP. (V
µ
ch
s, Duty Cycle ≤ 1%
Note
Note1
= 25°C, V
Note
Note2
Note3
Note3
DS
GS
GS
GS
= 0 V)
= 0 V)
= 10 V, I
= 4.5 V, I
DD
DS
N-CHANNEL POWER MOS FET
= 15 V, R
= 10 V, V
D
Note2
D
= 9.0 A)
= 9.0 A)
A
= 25°C, All terminals are connected.)
G
GS
= 25 Ω, L = 100
DATA SHEET
SWITCHING
= 0 V)
R
R
I
I
D(pulse)
V
V
D(DC)
th(ch-A)
T
E
th(ch-L)
P
P
T
I
DSS
GSS
AS
stg
AS
T1
T2
ch
MOS FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in
µ
−55 to +150
H, V
114
µ
µ
µ
µ
22
PA2707GR-E1
PA2707GR-E1-A
PA2707GR-E2
PA2707GR-E2-A
±20
±19
±76
150
1.1
2.5
30
19
36
GS
external electrode and other parts.)
PART NUMBER
= 20 → 0 V
°C/W
°C/W
µ
mJ
°C
°C
W
W
V
V
A
A
A
Note
Note
PA2707GR
Power SOP8
Power SOP8
Power SOP8
Power SOP8
PACKAGE
2004

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upa2707gr-e2-a Summary of contents

Page 1

DESCRIPTION The µ PA2707GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance R = 4.3 mΩ MAX DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 T - Ambient Temperature - A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 ...

Page 4

GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 0 - 100 T - Channel Temperature - °C ch DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15 Pulsed ...

Page 5

SWITCHING CHARACTERISTICS 1000 t d(of f) 100 d(on Ω 0 Drain Current - A D ...

Page 6

PACKAGE DRAWING (Unit: mm) Power SOP8 Source 4 ; Gate Drain 6.0 ±0 4.4 5.37 MAX. 0.5 ±0.2 1.27 0.78 MAX. +0.10 0.40 0.12 M –0.05 EQUIVALENT ...

Page 7

The information in this document is current as of June, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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