upa2709gr Renesas Electronics Corporation., upa2709gr Datasheet - Page 2

• Manufacturer Part Number: upa2709gr
• Description: Switching N-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
GS
= 20
PG.
→
CHARACTERISTICS
0 V
PG.
I
G
V
= 2 mA
50
DD
R
Ω
D.U.T.
G
I
D
= 25
50
I
AS
D.U.T.
Ω
Ω
Note
Note
BV
DSS
Starting T
Note
R
V
L
DD
V
DS
L
V
SYMBOL
DD
R
R
ch
V
V
| y
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
R
GSS
DSS
t
t
t
oss
rss
GS
GD
rr
A
fs
iss
r
f
G
G
rr
|
= 25°C, All terminals are connected.)
Data Sheet G17515EJ1V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
f = 1 MHz
D
F
F
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 13 A
= 13 A, V
= 13 A, V
V
0
= 10 Ω
GS
= 30 V, V
=
= 10 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V
= 0 V
= 15 V, I
= 10 V
= 15 V
= 5 V
τ = 1 s
Duty Cycle
±
TEST CIRCUIT 2 SWITCHING TIME
PG.
20 V, V
TEST CONDITIONS
μ
τ
GS
GS
D
D
D
D
D
GS
μ
= 1 mA
= 7.0 A
= 0 V
= 0 V
= 7.0 A
= 7.0 A
s
DS
= 7.0 A
≤
= 0 V
1%
= 0 V
R
G
D.U.T.
R
V
DD
L
MIN.
1.5
V
Wave Form
V
Wave Form
7
GS
DS
V
V
V
GS
DS
1270
TYP.
10.6
0
0
DS
320
110
8.3
5.3
7.8
3.8
3.3
0.8
1.2
10
40
11
25
22
10%
t
d(on)
90%
μ
t
on
10% 10%
t
PA2709GR
MAX.
r
10.5
±
2.5
10
15
10
V
GS
t
d(off)
t
off
90%
UNIT
mΩ
mΩ
90%
t
μ
μ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
f
Ω
V
S
V
A
A