upa2701 Renesas Electronics Corporation., upa2701 Datasheet

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upa2701

Manufacturer Part Number
upa2701
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2701.pdf (8 pages)

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Document No. G15714EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP(K)
Printed in Japan
• Low on-state resistance
• Low C
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%
Remark
DESCRIPTION
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
The
R
R
DS(on)1
DS(on)2
PART NUMBER
µ
2. Mounted on ceramic substrate of 1200 mm
3. Starting T
PA2701GR is N-Channel MOS Field Effect Transistor
µ PA2701GR
iss
= 7.5 mΩ MAX. (V
= 11.6 mΩ MAX. (V
: C
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is extemally required if a voltage exceeding
the rated voltage may be applied to this device.
iss
= 1200 pF TYP. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
ch
Note1
= 25°C, V
Note3
DS
Note3
A
GS
= 25°C)
GS
= 0 V)
GS
= 0 V)
= 10 V, I
DD
= 4.5 V, I
N-CHANNEL POWER MOS FET
DS
= 15 V, R
Power SOP8
Note2
PACKAGE
= 10 V, V
D
A
The mark ! shows major revised points.
= 7.0 A)
D
= 25°C, All terminals are connected.)
= 7.0 A)
G
= 25 Ω, L = 100 µ H, V
GS
DATA SHEET
SWITCHING
= 0 V)
I
D(pulse)
V
I
V
D(DC)
T
E
T
P
I
2
DSS
GSS
AS
stg
AS
ch
x 2.2 mm
T
MOS FIELD EFFECT TRANSISTOR
–55 to +150
19.6
±20
±14
±56
150
2.0
30
14
GS
= 20 → 0 V
8
1
PACKAGE DRAWING (Unit: mm)
5.37 MAX.
mJ
°C
°C
W
V
V
A
A
A
0.40
1.27
µ µ µ µ PA2701GR
+0.10
–0.05
0.78 MAX.
5
4
EQUIVALENT CIRCUIT
0.12 M
Gate
Gate
Protection
Diode
1, 2, 3
4
5, 6, 7, 8 ; Drain
©
0.5 ±0.2
6.0 ±0.3
Source
4.4
Drain
; Source
; Gate
Body
Diode
0.8
2002
0.10

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upa2701 Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION µ The PA2701GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-state resistance R = 7.5 mΩ MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T ! DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 D(pulse) ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Pulsed 10 T ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 Pulsed 4 100 125 150 T - Channel Temperature - ˚C ch CAPACITANCE ...

Page 6

Data Sheet G15714EJ2V0DS µ µ µ µ PA2701GR ...

Page 7

Data Sheet G15714EJ2V0DS µ µ µ µ PA2701GR 7 ...

Page 8

The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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