upa2715 Renesas Electronics Corporation., upa2715 Datasheet

upa2715

Manufacturer Part Number

upa2715

Description

Switching P-channel Power Mos Fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2715.pdf (6 pages)

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Document No. G16826EJ1V0DS00 (1st edition)

Date Published June 2006 NS CP(K)

Printed in Japan

DESCRIPTION

power management applications of notebook computers

and Li-ion battery protection circuit.

FEATURES

•

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

The

Low on-state resistance

Low C

Built-in gate protection diode

Small and surface mount package (Power SOP8)

PA2715GR-E1-A

PA2715GR-E2-A

DS(on)1

DS(on)2

electrode and other parts.)

PART NUMBER

PA2715GR is P-Channel MOS FET designed for

2. Mounted on a glass epoxy board of 25.4 mm

3. Starting T

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

iss

: C

= 4.6 mΩ MAX. (V

= 9.0 mΩ MAX. (V

iss

= 3500 pF TYP.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note2

Note3

= 0 V)

= −10 V, I

= −4.5 V, I

= −15 V, R

P-CHANNEL POWER MOS FET

Power SOP8

PACKAGE

Note2

= −9.0 A)

= 25°C, All terminals are connected.)

= 25 Ω, L = 100

DATA SHEET

SWITCHING

D(pulse)

D(DC)

GSS

DSS

stg

× 0.8 mm, PW = 10 sec

−55 to +150

MOS FIELD EFFECT TRANSISTOR

m150

H, V

32.4

−30

m20

m18

150

−18

1.1

2.5

= −20 → 0 V

°C

5.37 MAX.

PACKAGE DRAWING (Unit: mm)

0.40

1.27

+0.10

–0.05

0.78 MAX.

PA2715GR

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1, 2, 3

5, 6, 7, 8 : Drain

0.5 ±0.2

6.0 ±0.3

Source

4.4

Drain

: Source

: Gate

Body

Diode

2003, 2006

0.8

0.10

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upa2715 Summary of contents

Page 1

DESCRIPTION μ The PA2715GR is P-Channel MOS FET designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance = − 4.6 mΩ MAX. (V DS(on −4.5 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

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upa2715 Renesas Electronics Corporation., upa2715 Datasheet

upa2715

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