upa2714 Renesas Electronics Corporation., upa2714 Datasheet
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upa2714
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upa2714 Summary of contents
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P-CHANNEL POWER MOS FET DESCRIPTION µ The PA2714GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance − mΩ MAX ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA - 100 I ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 30 −4 − 0.2 - 0 Drain to Source Voltage ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE −4 −4 − −3 Pulsed 0 - 100 T - Channel Temperature ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 = − − Ω −20 → Starting T = 25°C ...
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Data Sheet G15982EJ2V0DS µ µ µ µ PA2714GR 7 ...
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The information in this document is current as of November, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...