upa2713 Renesas Electronics Corporation., upa2713 Datasheet

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upa2713

Manufacturer Part Number
upa2713
Description
Switching P-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upa2713GR
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
upa2713GR-E1-AT
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Document No. G15981EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
DESCRIPTION
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
The PA2713GR is P-channel MOS Field Effect Transistor
Low on-state resistance
Low C
Small and surface mount package (Power SOP8)
R
R
R
DS(on)1
DS(on)2
DS(on)3
2. Mounted on ceramic substrate of 1200 mm
3. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
4. Starting T
PART NUMBER
iss
= 16 m
= 25 m
= 30 m
: C
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
PA2713GR
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 1600 pF TYP.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
ch
Note1
= 25°C, V
Note2
Note3
Note4
Note4
DS
GS
GS
GS
GS
= 0 V)
= 10 V, I
= 4.5 V, I
= 4.0 V, I
= 0 V)
DD
= 15 V, R
P-CHANNEL POWER MOS FET
1%
Power SOP8
D
PACKAGE
D
D
= 4.0 A)
= 4.0 A)
= 4.0 A)
A
= 25°C, All terminals are connected.)
G
DATA SHEET
= 25
I
I
D(pulse)
V
V
D(DC)
P
P
T
E
T
I
SWITCHING
DSS
GSS
AS
stg
AS
T1
T2
ch
2
, L = 100 H, V
x 2.2 mm
MOS FIELD EFFECT TRANSISTOR
55 to +150
m20
m32
150
6.4
m8
30
2
2
8
GS
= 20
PACKAGE DRAWING (Unit: mm)
8
1
5.37 MAX.
mJ
°C
°C
W
W
V
V
A
A
A
0.40
1.27
0 V
+0.10
–0.05
0.78 MAX.
PA2713GR
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
1, 2, 3
4
5, 6, 7, 8: Drain
0.5 ±0.2
6.0 ±0.3
4.4
: Source
: Gate
Source
Drain
Body
Diode
0.8
0.10
2002

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upa2713 Summary of contents

Page 1

DESCRIPTION The PA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-state resistance MAX DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 100 I ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 40 Pulsed 4 4 0.2 - 0 Drain to Source Voltage - ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 100 T - Channel Temperature - °C ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 6 Starting T = ...

Page 7

The information in this document is current as of January, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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