upa2794agr Renesas Electronics Corporation., upa2794agr Datasheet - Page 3

• Manufacturer Part Number: upa2794agr
• Description: Switching N- And P-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
N-channel
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
D.U.T.
Ω
G
I
D
= 25
50
I
D.U.T.
Ω
AS
Ω
Note
Note
BV
DSS
Starting T
R
V
Note
L
DD
V
DS
L
V
DD
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
SYMBOL
ch
DSS
GSS
d(on)
r
d(off)
f
rr
GS(off)
DS(on)1
DS(on)2
iss
oss
rss
F(S-D)
G
GS
GD
rr
fs
A
|
= 25°C. All terminals are connected.)
Data Sheet G19922EJ1V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
I
V
V
I
I
di/dt = 100 A/
V
0
D
F
F
GS
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 5.5 A, V
= 5.5 A, V
τ = 1 s
Duty Cycle
= 5.5 A,
= 0 Ω
= 60 V, V
=
= 10 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V,
= 0 V,
= 30 V, I
= 10 V,
= 48 V,
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
PG.
±
μ
20 V, V
τ
TEST CONDITIONS
GS
GS
D
D
D
D
≤
D
GS
μ
= 1 mA
= 2.8 A
= 2.8 A
= 2.8 A,
1%
= 0 V
= 0 V,
s
DS
= 2.8 A
= 0 V
R
= 0 V
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
1.5
4
V
V
V
GS
DS
0
0
DS
TYP.
2200
19.5
10%
μ
245
136
t
2.0
7.6
7.5
6.3
0.8
23
10
16
58
41
11
28
29
90%
d(on)
PA2794AGR
t
on
10% 10%
MAX.
t
r
±
2.5
1.5
10
25
33
10
V
GS
t
d(off)
UNIT
t
mΩ
mΩ
off
μ
μ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
90%
V
S
V
A
A
90%
t
f
3