upa2792agr Renesas Electronics Corporation., upa2792agr Datasheet

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upa2792agr

Manufacturer Part Number
upa2792agr
Description
Switching N- And P-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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upa2792agr Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

N- AND P-CHANNEL POWER MOS FET DESCRIPTION μ The PA2792AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES • Low on-state resistance N-channel R = 12.5 mΩ MAX. (V DS(on mΩ ...

Page 4

ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) I Note1 Drain Current (pulse) I Note2 Total Power Dissipation (1 unit) ...

Page 5

ELECTRICAL CHARACTERISTICS (T N-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output ...

Page 6

P-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance C Reverse ...

Page 7

TYPICAL CHARACTERISTICS (T A (1) N-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - °C A FORWARD BIAS SAFE ...

Page 8

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 0 Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ...

Page 9

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 0 - 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS 1000 t ...

Page 10

P-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA -100 I ...

Page 11

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -50 -40 − −4 -20 -10 Pulsed - Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL ...

Page 12

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE −4 − - 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS 1000 t d(off) 100 ...

Page 13

TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Reel side MARKING INFORMATION Pb-free plating marking RECOMMENDED SOLDERING CONDITIONS μ The PA2792AGR should be soldered and mounted under the following recommended conditions. ...

Page 14

The information in this document is current as of August, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of ...

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