upa2790 Renesas Electronics Corporation., upa2790 Datasheet - Page 4

• Manufacturer Part Number: upa2790
• Description: Switching N- And P-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

P-channel
Note Pulsed
4
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= −20 → 0 V
−
I
CHARACTERISTICS
PG.
G
V
= −2 mA
50 Ω
DD
I
D
R
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
Note
Note
DSS
Starting T
V
R
V
DS
L
DD
Note
L
V
ch
DD
SYMBOL
R
R
R
V
V
| y
t
t
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
Q
Q
C
GS(off)
Q
d(on)
d(off)
F(S-D)
Q
DSS
GSS
t
t
t
oss
rss
GS
GD
rr
fs
iss
r
f
G
rr
|
Data Sheet G16954EJ3V0DS
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
I
V
V
I
I
di/dt = 100 A/
V
D
F
F
0
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
G
DD
GS
GS
= 6 A, V
= 6 A, V
= −6 A
τ = 1 s
Duty Cycle ≤ 1%
PG.
= 10 Ω
(−)
= −30 V, V
=
= −10 V, I
= −10 V, I
= −10 V, I
= −4.5 V, I
= −4.0 V, I
= −10 V
= 0 V
= −15 V, I
= −10 V
= −24 V
= −10 V
TEST CIRCUIT 2 SWITCHING TIME
m
16 V, V
μ
τ
TEST CONDITIONS
GS
GS
= 0 V
= 0 V
μ
D
D
D
D
R
D
D
GS
s
DS
= −1 mA
= −3 A
G
= −3 A
= −3 A
= −3 A
= −3 A
= 0 V
= 0 V
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
−1.0
2
V
V
V
GS
DS
DS
0
0
(−)
(−)
TYP.
0.92
10%
t
460
130
8.5
4.8
1.7
3.3
90%
d(on)
43
58
65
77
42
19
11
21
12
μ
t
on
PA2790GR
10%
MAX.
t
−2.5
−10
m
110
r
60
80
V
10
GS
t
10%
d(off)
t
UNIT
off
mΩ
mΩ
mΩ
90%
μ
μ
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
90%
t
f