upa2747 Renesas Electronics Corporation., upa2747 Datasheet

upa2747

Manufacturer Part Number

upa2747

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2747.pdf (6 pages)

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Document No. G20074EJ1V0DS00 (1st edition)

Date Published November 2009 NS

Printed in Japan

DESCRIPTION

FEATURES

• Low on-state resistance

• R

• Low Q

• Thin type surface mount package with heat spreader (8-pin HVSON)

• RoHS Compliant

• Halogen Free

ABSOLUTE MAXIMUM RATINGS (T

THERMAL RESISTANCE

Channel to Ambient Thermal Resistance

Channel to Case (Drain) Thermal Resistance

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

for DC/DC converter applications.

The

DS(on)1

DS(on)2

PA2747UT1A is N-channel MOS Field Effect Transistor designed

2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

3. Starting T

= 4.5 mΩ MAX. (V

= 6.8 mΩ MAX. (V

the device operation. Steps must be taken to stop generation of static electricity as much as possible, and

quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

= 25°C)

Note2

Note3

= 25°C)

= 0 V)

= 10 V, I

= 4.5 V, I

N-CHANNEL POWER MOSFET

= 15 V, R

Note2

= 40 A)

Note2

= 20 A)

= 25°C, All terminals are connected.)

DATA SHEET

= 25 Ω, V

D(DC)

D(pulse)

stg

SWITCHING

DSS

GSS

th(ch-A)

th(ch-C)

MOS FIELD EFFECT TRANSISTOR

= 20 → 0 V, L = 100

−55 to +150

±160

83.3

±20

±40

150

122

1.5

4.6

1.5

PA2747UT1A

°C/W

°C

PACKAGE DRAWING (Unit: mm)

EQUIVALENT CIRCUIT

0.2

Gate

0.6 ±0.15

5.4 ±0.2

3.65 ±0.2

6 ±0.2

Source

Drain

0.7 ±0.15

Body

Diode

1, 2, 3

5, 6, 7, 8: Drain

2009

: Source

: Gate

0.10 S

Related parts for upa2747

upa2747 Summary of contents

Page 1

N-CHANNEL POWER MOSFET DESCRIPTION μ The PA2747UT1A is N-channel MOS Field Effect Transistor designed for DC/DC converter applications. FEATURES • Low on-state resistance • 4.5 mΩ MAX DS(on)1 GS • 6.8 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance ...

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upa2747 Renesas Electronics Corporation., upa2747 Datasheet

upa2747

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