upa2732ut1a Renesas Electronics Corporation., upa2732ut1a Datasheet - Page 2

• Manufacturer Part Number: upa2732ut1a
• Description: Switching P-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
2
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= −20 → 0 V
−
CHARACTERISTICS
I
PG.
G
V
= −2 mA
50 Ω
DD
I
D
R
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
Note
Note
DSS
Starting T
V
R
V
DS
Note
DD
L
L
V
ch
DD
SYMBOL
R
R
V
V
| y
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
GSS
DSS
t
t
t
oss
rss
GS
GD
rr
A
fs
iss
r
f
G
rr
|
= 25°C, All terminals are connected.)
Data Sheet G17641EJ1V1DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 50 A/
D
F
F
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
G
=
= 40 A, V
= 40 A, V
V
0
= 10 Ω
GS
=
=
=
=
=
=
=
= 0 V
=
=
=
=
−
τ = 1 s
Duty Cycle ≤ 1%
PG.
40 A
(−)
−
m
−
−
−
−
−
−
−
−
−
TEST CIRCUIT 2 SWITCHING TIME
30 V, V
10 V, I
10 V, I
10 V
20 V, V
10 V, I
4.5 V, I
15 V, I
10 V
24 V
10 V
TEST CONDITIONS
μ
GS
GS
τ
μ
s
D
D
D
D
= 0 V
= 0 V
D
GS
DS
=
=
=
=
=
R
= 0 V
= 0 V
−
−
−
−
G
−
1 mA
20 A
20 A
20 A
20 A
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
MIN.
−
DS
GS
30
1.0
V
V
V
GS
DS
3280
1310
TYP.
DS
0.85
0
0
560
680
440
133
3.1
4.3
14
15
14
41
88
59
(−)
(−)
10%
t
μ
90%
d(on)
PA2732UT1A
t
on
10%
MAX.
t
m
−
r
3.7
6.7
1.2
V
−
100
2.5
GS
1
t
10%
d(off)
t
off
90%
UNIT
90%
t
mΩ
mΩ
μ
nA
nC
nC
nC
nC
pF
pF
pF
f
ns
ns
ns
ns
ns
V
S
V
A