upa2731 Renesas Electronics Corporation., upa2731 Datasheet

upa2731

Manufacturer Part Number

upa2731

Description

Switching P-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2731.pdf (6 pages)

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Document No. G17392EJ1V0DS00 (1st edition)

Date Published January 2006 NS CP(K)

Printed in Japan

FEATURES

• Low on-state resistance

• Low C

• Built-in gate protection diode

• Small and surface mount package (8pin HVSON)

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external electrode.)

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

for power management applications of notebook computers and Li-ion

battery protection circuit.

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

The

DS(on)1

DS(on)2

PA2731T1A-E1-AZ

PA2731T1A-E2-AZ

2. Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm)

3. Starting T

PA2731T1A is P-channel MOS Field Effect Transistor designed

iss

= 3.3 mΩ MAX. (V

= 6.4 mΩ MAX. (V

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

: C

PART NUMBER

iss

= 3620 pF TYP.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note

Note2

Note3

= 0 V)

= −10 V, I

= −4.5 V, I

= −15 V, R

P-CHANNEL POWER MOSFET

Note2

= −22 A)

= 25°C, All terminals are connected.)

8pin HVSON

DATA SHEET

PACKAGE

= 25 Ω, L = 100

D(pulse)

D(DC)

GSS

DSS

SWITCHING

stg

MOS FIELD EFFECT TRANSISTOR

−55 to +150

m180

−30

m20

m44

150

−22

1.5

4.6

H, V

= −20 → 0 V

°C

PACKAGE DRAWING (Unit: mm)

PA2731T1A

0.2

0.6 ±0.15

5.4 ±0.2

3.65 ±0.2

6 ±0.2

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.7 ±0.15

1, 2, 3

5, 6, 7, 8: Drain

Source

Drain

: Source

: Gate

Body

Diode

0.10 S

2004

Related parts for upa2731

upa2731 Summary of contents

Page 1

DESCRIPTION The μ PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance = − 3.3 mΩ MAX. (V DS(on)1 GS ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate ...

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upa2731 Renesas Electronics Corporation., upa2731 Datasheet

upa2731

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upa2731 Summary of contents

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