upa2734gr-e2-at Renesas Electronics Corporation., upa2734gr-e2-at Datasheet

upa2734gr-e2-at

Manufacturer Part Number

upa2734gr-e2-at

Description

Switching P-channel Power Mos Fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2734GR-E2-AT.pdf (6 pages)

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Document No. G19426EJ1V0DS00 (1st edition)

Date Published September 2008 NS

Printed in Japan

DESCRIPTION

FEATURES

• Low input capacitance

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)

• RoHS Compliant

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external electrode and other parts.)

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

designed for DC/DC converter and power management

applications.

• Low on-state resistance

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Notes 1. V

The

DS(on)1

DS(on)2

iss

PA2734GR-E1-AT

PA2734GR-E2-AT

= 1130 pF TYP. (V

2. PW ≤ 10

3. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

PART NUMBER

PA2734GR is P-Channel MOS Field Effect Transistor

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

= 38 mΩ MAX. (V

= 72 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

= −4.5 V

Note1

s, Duty Cycle ≤ 1%

Note2

Note

Note3

= −10 V, V

= 0 V)

= −4.5 V, I

= −2.5 V, I

LEAD PLATING

P-CHANNEL POWER MOS FET

Pure Sn

Note3

= 0 V)

= −7.0 A)

= −3.5 A)

= 25°C, All terminals are connected.)

DATA SHEET

SWITCHING

D(DC)

D(pulse)

DSS

GSS

stg

MOS FIELD EFFECT TRANSISTOR

Tape 2500 p/reel

PACKING

−55 to +150

−30

m12

m28

150

1.1

2.5

PACKAGE DRAWING (Unit: mm)

5.37 MAX.

°C

0.40

1.27

+0.10

–0.05

0.78 MAX.

PA2734GR

Power SOP8

0.08 g TYP.

0.12 M

PACKAGE

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1, 2, 3

5, 6, 7, 8 : Drain

0.5 ±0.2

6.0 ±0.3

4.4

: Source

: Gate

Source

Drain

Body

Diode

0.8

0.10

2008

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