upa2730 Renesas Electronics Corporation., upa2730 Datasheet

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upa2730

Manufacturer Part Number
upa2730
Description
Switching P-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2730.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa2730TP
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa2730TP-E2
Manufacturer:
NEC
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
upa2730TP-E2-AZ
Manufacturer:
RENESAS
Quantity:
21 500
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
DESCRIPTION
MOS Field Effect Transistor designed for power management
applications of notebook computers and Li-ion battery
protection circuit.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec
The PA2730TP which has a heat spreader is P-Channel
Low on-state resistance
R
R
R
Low C
Small and surface mount package (Power HSOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. PW
3. Starting T
G15983EJ1V0DS00 (1st edition)
November 2002 NS CP(K)
iss
PA2730TP
= 7.0 m
= 10.5 m
= 12.0 m
: C
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
iss
= 4670 pF TYP.
10 s, Duty Cycle
Note1
ch
MAX. (V
MAX. (V
MAX. (V
Note2
C
= 25°C, V
= 25°C)
Note3
DS
Note3
C
A
GS
= 25°C)
= 25°C)
GS
= 0 V)
GS
GS
= 0 V)
= –10 V, I
DD
= –4.5 V, I
= –4.0 V, I
P-CHANNEL POWER MOS FET
= –15 V, R
Note1
Power HSOP8
1%
PACKAGE
D
A
= –7.5 A)
D
D
= 25°C, Unless otherwise noted, All terminals are connected.)
= –7.5 A)
= –7.5 A)
G
DATA SHEET
= 25
SWITCHING
I
I
I
D(pulse)
V
V
D(DC)1
D(DC)2
T
E
P
P
T
I
DSS
GSS
AS
stg
AS
, L = 100 H, V
T1
T2
ch
MOS FIELD EFFECT TRANSISTOR
55 to + 150
m120
22.5
m20
m42
m20
150
40
30
3
15
GS
= –20
PACKAGE DRAWING (Unit: mm)
8
1
1
8
mJ
°C
°C
W
W
V
V
A
A
A
A
5.2
4.1 MAX.
0.40
1.27 TYP.
+0.17
–0.2
2.0 ±0.2
0 V
+0.10
–0.05
9
5
4
4
5
0.12 M
PA2730TP
S
0.8 ±0.2
EQUIVALENT CIRCUIT
Gate
1, 2, 3
4
5, 6, 7, 8, 9 ; Drain
4.4 ±0.15
6.0 ±0.3
; Source
; Gate
Source
Drain
0.10
Body
Diode
S
2002

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upa2730 Summary of contents

Page 1

DESCRIPTION The PA2730TP which has a heat spreader is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-state resistance R = 7.0 m MAX –10 V, ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 1000 R ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 120 4 100 4 Drain to Source ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 7 Pulsed 100 T - Channel Temperature - °C ch SWITCHING CHARACTERISTICS ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 22 ...

Page 7

Data Sheet G15983EJ1V0DS PA2730TP 7 ...

Page 8

The information in this document is current as of November, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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