upa2756 Renesas Electronics Corporation., upa2756 Datasheet

upa2756

Manufacturer Part Number

upa2756

Description

Switching N-channel Power Mos Fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2756.pdf (7 pages)

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Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

upa2756GR-E1

Manufacturer:

NEC

Quantity:

20 000

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Document No. G17407EJ1V0DS00 (1st edition)

Date Published January 2005 NS CP(K)

Printed in Japan

DESCRIPTION

Transistor designed for switching applications.

FEATURES

• Low on-state resistance

• Low C

• Built-in G-S protection diode against ESD

• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (1 unit)

Total Power Dissipation (2 units)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Repetitive Avalanche Energy

Notes 1. Mounted on ceramic substrate of 2000 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

The

DS(on)1

DS(on)2

2. PW ≤ 10

3. Starting T

4. I

PA2756GR is Dual N-channel MOS Field Effect

PART NUMBER

iss

= 105 mΩ MAX. (V

= 150 mΩ MAX. (V

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

: C

PA2756GR

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

≤ 4.0 A, T

= 260 pF TYP.

Note1

s, Duty Cycle ≤ 1%

Note2

= 25°C, V

≤ 150°C

Note3

= 0 V)

Note4

= 0 V)

= 10 V, I

= 4.0 V, I

Note1

= 30 V, R

N-CHANNEL POWER MOS FET

Power SOP8

PACKAGE

= 2.0 A)

D(pulse)

= 2.0 A)

D(DC)

GSS

DSS

stg

= 25°C)

= 25 Ω, V

DATA SHEET

SWITCHING

−55 to +150

x 2.2 mm

±4.0

150

±20

±16

1.6

2.0

4.0

1.6

MOS FIELD EFFECT TRANSISTOR

= 20 → 0 V

°C

PACKAGE DRAWING (Unit: mm)

5.37 MAX.

Gate 1

0.40

Gate

Protection

Diode

1.27

+0.10

–0.05

0.78 MAX.

PA2756GR

EQUIVALENT CIRCUIT

Source 1

0.12 M

Drain 1

7, 8: Drain 1

5, 6: Drain 2

Body

Diode

0.5 ±0.2

: Source 1

: Gate 1

: Source 2

: Gate 2

6.0 ±0.3

4.4

Gate 2

Gate

Protection

Diode

0.8

Source 2

Drain 2

0.10

Body

Diode

2005

Related parts for upa2756

upa2756 Summary of contents

Page 1

DESCRIPTION µ The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. FEATURES • Low on-state resistance R = 105 mΩ MAX DS(on 150 mΩ MAX 4.0 ...

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

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upa2756 Renesas Electronics Corporation., upa2756 Datasheet

upa2756

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