upa2750gr Renesas Electronics Corporation., upa2750gr Datasheet

upa2750gr

Manufacturer Part Number

upa2750gr

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2750GR.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

designed for DC/DC converters and power management

application of notebook computers.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (1 unit)

Total Power Dissipation (2 unit)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW

The PA2750GR is N-Channel MOS Field Effect Transistor

Dual chip type

Low on-state resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. T

3. Starting T

PA2750GR

iss

G15780EJ1V0DS00 (1st edition)

March 2002 NS CP(K)

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

= 15.5 m

= 21.0 m

= 23.9 m

: C

= 25°C , Mounted on ceramic substrate of 2000 mm

iss

= 1040 pF TYP. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty cycle

MAX. (V

Note1

= 25°C , V

Note3

= 0 V)

Note2

= 10 V, I

= 4.5 V, I

= 4.0 V, I

N-CHANNEL POWER MOS FET

Power SOP8

= 15 V, R

PACKAGE

= 10 V, V

= 4.5 A)

= 25°C, A ll terminals are connected.)

= 4.5 A)

= 25

DATA SHEET

SWITCHING

= 0 V)

D(pulse)

D(DC)

, V

GSS

DSS

stg

MOS FIELD EFFECT TRANSISTOR

= 20

–55 to +150

±9.0

±20

±36

150

1.7

2.0

9.0

8.1

x 2.2 mm

0 V

PACKAGE DRAWING (Unit: mm)

5.37 Max.

°C

0.40

1.27

+0.10

–0.05

0.78 Max.

PA2750GR

EQUIVALENT CIRCUIT

0.12 M

Gate

Protection

Diode

(1/2 circuit)

7, 8

5, 6

0.5 ±0.2

; Source 1

; Gate 1

; Drain 1

; Source 2

; Gate 2

; Drain 2

6.0 ±0.3

Source

Drain

4.4

Body

Diode

2001

0.8

0.10

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upa2750gr Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION The PA2750GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management application of notebook computers. FEATURES Dual chip type Low on-state resistance R = 15.5 m MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 25˚C A 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 Pulsed 100 T - Channel Temperature - ˚C ch ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) I ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 Starting 8 100 ...

Page 7

Data Sheet G15780EJ1V0DS PA2750GR 7 ...

Page 8

The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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