upa2752 Renesas Electronics Corporation., upa2752 Datasheet

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upa2752

Manufacturer Part Number
upa2752
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2752.pdf (8 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa2752GR
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa2752GR-E2
Manufacturer:
NEC
Quantity:
20 000
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
designed for DC/DC converters and power management applications
of notebook computers.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
The PA2752GR is Dual N-Channel MOS Field Effect Transistor
Dual chip type
Low on-state resistance
R
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. T
3. Starting T
PA2752GR
iss
G15716EJ1V0DS00 (1st edition)
February 2002 NS CP(K)
= 23.0 m
= 35.0 m
= 41.0 m
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
: C
A
= 25°C, Mounted on ceramic substrate of 2000 mm
iss
= 480 pF TYP.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty cycle
ch
MAX. (V
MAX. (V
MAX. (V
Note1
C
= 25°C, V
= 25°C)
Note3
Note3
DS
GS
= 0 V)
GS
GS
GS
= 0 V)
DD
Note2
Note2
= 10 V, I
= 4.5 V, I
= 4.0 V, I
Power SOP8
N-CHANNEL POWER MOS FET
= 15 V, R
PACKAGE
1%
D
A
D
D
= 4.0 A)
= 25°C, All terminals are connected.)
= 4.0 A)
= 4.0 A)
G
I
I
D(pulse)
V
V
= 25
D(DC)
T
E
T
P
P
I
DSS
GSS
AS
stg
AS
DATA SHEET
ch
T
T
SWITCHING
, V
–55 to +150
GS
±8.0
= 20 → 0 V
MOS FIELD EFFECT TRANSISTOR
±20
±32
150
1.7
2.0
6.4
30
8
2
x 2.2 mm
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE DRAWING (Unit: mm)
8
1
5.37 MAX.
PA2752GR
0.40
1.27
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
+0.10
–0.05
0.78 MAX.
5
4
(1/2 Circuit)
©
0.12 M
Source
Drain
1
2
7, 8 : Drain 1
3
4
5, 6 : Drain 2
0.5 ±0.2
: Source 1
: Gate 1
: Source 2
: Gate 2
6.0 ±0.3
Body
Diode
4.4
2002
0.8
0.10

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upa2752 Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION The PA2752GR is Dual N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Dual chip type Low on-state resistance R = 23.0 m MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 25˚C A 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 Pulsed 100 125 T - Channel Temperature - ˚C ch ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) I ...

Page 6

SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 Starting 6 100 ...

Page 7

Data Sheet G15716EJ1V0DS PA2752GR 7 ...

Page 8

The information in this document is current as of February, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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