upa2521 Renesas Electronics Corporation., upa2521 Datasheet

upa2521

Manufacturer Part Number

upa2521

Description

N-channel Mos Fet For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2521.pdf (6 pages)

Current page: 1 of 6
Download datasheet (164Kb)

Document No. G19187EJ1V0DS00 (1st edition)

Date Published March 2008 NS

Printed in Japan

FEATURES

• Low on-state resistance

• Built-in gate protection diode

• Small and surface mount package (8-pin VSOF (2429))

• Pb-free (This product does not contain Pb in external electrode

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

DESCRIPTION

designed for DC/DC converter and power management

applications of portable equipments.

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 5 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

The

DS(on)1

DS(on)2

2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt

3. Starting T

PA2521 is N-channel MOS Field Effect Transistor

= 16.5 mΩ MAX. (V

= 25 mΩ MAX. (V

and other parts.)

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note2

Note3

= 0 V)

= 4.5 V, I

= 10 V, I

= 15 V, R

Note2

= 4.0 A)

N-CHANNEL MOS FET

= 8.0 A)

= 25°C, All terminals are connected.)

FOR SWITCHING

= 25 Ω, V

DATA SHEET

D(DC)

D(pulse)

stg

DSS

GSS

−55 to +150

= 20 → 0 V, L = 100

MOS FIELD EFFECT TRANSISTOR

±20

±32

150

1.0

2.2

6.4

±8

°C

0.32±0.05

PACKAGE DRAWING (Unit: mm)

0.65

2.9±0.1

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.05 M S A

PA2521

Source

Drain

1, 2, 3

5, 6, 7, 8: Drain

Body

Diode

0.17±0.05

0 to 0.025

: Source

: Gate

2008

Related parts for upa2521

upa2521 Summary of contents

Page 1

DESCRIPTION The μ PA2521 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipments. FEATURES • Low on-state resistance R = 16.5 mΩ MAX DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

Related keywords

upa2521 datasheet
upa2521 data sheet
upa2521 pdf datasheet
upa2521 component
upa2521 part
upa2521 distributor
upa2521 RoHS
upa2521 datasheet download

upa2521 Renesas Electronics Corporation., upa2521 Datasheet

upa2521

Related parts for upa2521

upa2521 Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Related keywords