upa2590 Renesas Electronics Corporation., upa2590 Datasheet

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upa2590

Manufacturer Part Number
upa2590
Description
N- And P-channel Mosfet For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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upa2590T1H-T1-AT
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Document No. G19217EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
DC/DC converters and power management applications of
portable equipments.
contribute minimize the equipments.
FEATURES
• 4.5 V drive available
• Low on-state resistance
• Built-in gate protection diode
• Small and surface mount package (8-pin VSOF (2429))
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: 2590
DESCRIPTION
The
N- and P-channel MOSFETs are assembled in one package, to
N-channel R
P-channel R
μ
μ
PA2590T1H-T1-AT
PA2590T1H-T2-AT
μ
PART NUMBER
PA2590 is N- and P-channel MOSFETs designed for
R
R
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
DS(on)1
DS(on)2
DS(on)1
DS(on)2
= 72 mΩ MAX. (V
= 105 mΩ MAX. (V
= 50 mΩ MAX. (V
= 83 mΩ MAX. (V
Note
Note
LEAD PLATING
N- AND P-CHANNEL MOSFET
Pure Sn
GS
GS
GS
GS
= −10 V, I
= 10 V, I
= 4.5 V, I
= −4.5 V, I
FOR SWITCHING
DATA SHEET
D
D
D
= 2 A)
= −2 A)
D
= 2 A)
8 mm embossed taping
= −2 A)
MOS FIELD EFFECT TRANSISTOR
3000 p/reel
PACKING
0.32±0.05
S
PACKAGE DRAWING (Unit: mm)
8
1
0.65
2.9±0.1
8-pin VSOF (2429)
0.05 M S A
PACKAGE
μ
5
4
PA2590
A
N-channel 1: Source
P-channel 3: Source
0.17±0.05
0 to 0.025
2: Gate
7, 8: Drain
4: Gate
5, 6: Drain
2008

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upa2590 Summary of contents

Page 1

DESCRIPTION μ The PA2590 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. FEATURES • 4.5 V drive available ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit Note2 Total ...

Page 3

ELECTRICAL CHARACTERISTICS (T N-channel MOSFET CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise ...

Page 4

P-channel MOSFET CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 5

TYPICAL CHARACTERISTICS (T A (1) N-channel MOSFET DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA 100 ...

Page 6

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 0.4 0.8 1 Drain to Source Voltage - V DS GATE TO SOURCE ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 120 100 4 Pulsed 0 -50 - 100 125 150 175 - Channel Temperature - °C ...

Page 8

P-channel MOSFET DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA -100 I D(pulse) -10 I ...

Page 9

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -18 -16 −10 V -14 - −4 - Pulsed 0 0 -0.4 -0.8 -1.2 -1 Drain to Source Voltage - V DS GATE ...

Page 10

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 140 120 = −4 100 80 60 − -50 - 100 125 150 175 - Channel Temperature - ° ...

Page 11

The information in this document is current as of May, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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