upa2550 Renesas Electronics Corporation., upa2550 Datasheet - Page 2

• Manufacturer Part Number: upa2550
• Description: Dual P-channel Mosfet For Switching
• Manufacturer: Renesas Electronics Corporation.

ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (1 unit, 5 s)
Total Power Dissipation (2 units, 5 s)
Channel Temperature
Storage Temperature
Notes 1. PW ≤ 10
EQUIVALENT CIRCUIT (1/2)
Gate
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
2
Gate
Protection
Diode
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
caution for electrostatic discharge.
Source
Drain
μ
Body
Diode
s, Duty Cycle ≤ 1%
Note1
DS
GS
= 0 V)
= 0 V)
Note2
Note2
A
V
V
I
I
P
P
T
T
= 25°C)
D(DC)
D(pulse)
ch
stg
DSS
GSS
T1
T2
Data Sheet G19179EJ1V0DS
−55 to +150
m5.0
−12
m20
150
1.5
2.2
m8
°C
°C
W
W
V
V
A
A
μ
PA2550