upa2350 Renesas Electronics Corporation., upa2350 Datasheet

upa2350

Manufacturer Part Number

upa2350

Description

Dual Nch Mosfet For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2350.pdf (9 pages)

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upa2350T1G-E4

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Document No.

Date Published

Printed in Japan

DESCRIPTION

battery protection circuit.

(EFLIP).

FEATURES

•

ORDERING INFORMATION

Remark "-A" indicates Pb-free (This product does not contain Pb in

ABSOLUTE MAXIMUM RATINGS (T

Source to Source Voltage (V

Gate to Source Voltage (V

Source Current (DC)

Source Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. Mounted on ceramic board of 50 cm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

The

Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

Monolithic Dual MOSFET

The Drain connection on circuit board is unnecessary, because

Drains of 2MOSFET are internally connected.

2.5 V drive available and low on-state resistance

Built-in G-S protection diode against ESD

Pb-free Bump

SS(on)1

SS(on)2

SS(on)3

SS(on)4

PA2350T1G-E4-A

PART NUMBER

2. PW ≤ 100

PA2350 is a Dual N-channel MOSFET designed for Li-ion

external electrode and other parts)."-E4" indicates the unit

orientation (E4 only).

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

G17995EJ1V0DS00 (1st edition)

March 2006 NS CP(K)

= 35 mΩ MAX. (V

= 37 mΩ MAX. (V

= 44 mΩ MAX. (V

= 55 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note1

s, Single pulse

Note2

Note1

= 0 V)

= 4.5 V, I

= 4.0 V, I

= 3.1 V, I

= 2.5 V, I

PACKAGE

4pinEFLIP

= 3.0 A)

= 25°C)

S(pulse)

DUAL Nch MOSFET

S(DC)

GSS

SSS

× 1.0mm

stg

FOR SWITCHING

DATA SHEET

−55 to +150

±12

±60

150

6.0

1.3

MOS FIELD EFFECT TRANSISTOR

°C

1-pin index mark S1

0.08 S

Source1

OUTLINE DRAWING (Unit: mm)

1.62 ± 0.02

TOP VIEW

FET1

Gate1

EQUIVALENT CIRCUIT

Dot area (For in-house)

0.1

Body Diode

PA2350

0.2 ± 0.02

0.28 ± 0.03

BOTTOM VIEW

FET2

Gate2

0.65

Source2

4 - φ 0.37

Gate

Protection

Diode

S1 : Source1

G1 : Gate1

G2 : Gate2

S2 : Source2

2006

0.65

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upa2350 Summary of contents

Page 1

DESCRIPTION μ The PA2350 is a Dual N-channel MOSFET designed for Li-ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection (EFLIP). FEATURES • Monolithic Dual MOSFET The Drain connection on circuit board is unnecessary, because Drains of ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Source Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Source to Source On-state Note. Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 3

TEST CIRCUIT 5 R SS(on TEST CIRCUIT 7 C iss Capacitance Capacitance Bridge Bridge S1 S1 TEST ...

Page 4

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA 100 R Limited ...

Page 5

SOURCE CURRENT vs. SOURCE TO SOURCE VOLTAGE 2.5 V TEST CIRCUIT 5 10 Pulsed Source to Source Voltage - V ...

Page 6

SOURCE TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 TEST CIRCUIT 3 Pulsed 3 100 T - ...

Page 7

Example of application circuit > LI-ion battery (1cell) protection circuit Li-ion battery pack Li-ion battery pack Li-ion Li-ion battery battery cell cell <Notes for using this device safely> When you use this device, in order to prevent a customer’s ...

Page 8

Figure 1 Recommended soldering conditions of INFRARED REFLOW Maximum temperature (Package's surface temperature) Time at maximum temperature Time of temperature higher than 220˚C Preheating time at 160 to 180˚C Maximum number of reflow processes Maximum chlorine content of rosin flux ...

Page 9

The information in this document is current as of March, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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