upa2351 Renesas Electronics Corporation., upa2351 Datasheet

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upa2351

Manufacturer Part Number
upa2351
Description
Upa2351 Datasheets
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upa2351T1G
Manufacturer:
NEC
Quantity:
645
Part Number:
upa2351T1G-E4
Manufacturer:
ST
Quantity:
3 050
Part Number:
upa2351T1G-E4-A
Manufacturer:
NEC
Quantity:
2 622
Document No.
Date Published
Printed in Japan
DESCRIPTION
battery protection circuit.
(EFLIP).
FEATURES
ORDERING INFORMATION
Remark "-A" indicates Pb-free (This product does not contain Pb in
ABSOLUTE MAXIMUM RATINGS (T
Source to Source Voltage (V
Gate to Source Voltage (V
Source Current (DC)
Source Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. Mounted on ceramic board of 50 cm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
The
Ecologically Flip chip MOSFET for Lithium-Ion battery Protection
Drains of 2MOSFET are internally connected.
Monolithic Dual MOSFET
The Drain connection on circuit board is unnecessary, because
2.5 V drive available and low on-state resistance
R
R
R
R
Built-in G-S protection diode against ESD
Pb-free Bump
μ
SS(on)1
SS(on)2
SS(on)3
SS(on)4
PA2351T1G-E4-A
μ
PART NUMBER
2. PW ≤ 100
PA2351 is a Dual N-channel MOSFET designed for Li-ion
external electrode and other parts)."-E4" indicates the unit
orientation (E4 only).
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
G17996EJ1V0DS00 (1st edition)
March 2006 NS CP(K)
= 40 mΩ MAX. (V
= 42 mΩ MAX. (V
= 50 mΩ MAX. (V
= 64 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
Note1
s, Single pulse
Note2
Note1
SS
GS
= 0 V)
GS
GS
GS
GS
= 0 V)
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
PACKAGE
4pinEFLIP
S
S
S
S
= 3.0 A)
= 3.0 A)
= 3.0 A)
= 3.0 A)
A
I
= 25°C)
S(pulse)
V
I
V
DUAL Nch MOSFET
S(DC)
T
2
T
P
GSS
SSS
× 1.0mm
stg
ch
FOR SWITCHING
T
DATA SHEET
−55 to +150
±12
±50
150
5.7
1.3
30
MOS FIELD EFFECT TRANSISTOR
°C
°C
W
1-pin index mark S1
V
V
A
A
S
0.08 S
OUTLINE DRAWING (Unit: mm)
Source1
1.62 ± 0.02
TOP VIEW
FET1
Gate1
EQUIVALENT CIRCUIT
Dot area (For in-house)
//
0.1
μ
Body Diode
S
PA2351
0.2 ± 0.02
0.28 ± 0.03
BOTTOM VIEW
G2
G1
0.65
FET2
Gate2
S2
S1
Source2
4 - φ 0.37
S1 : Source1
G1 : Gate1
G2 : Gate2
S2 : Source2
Gate
Protection
Diode
0.65
2006

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upa2351 Summary of contents

Page 1

DESCRIPTION μ The PA2351 is a Dual N-channel MOSFET designed for Li-ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection (EFLIP). FEATURES • Monolithic Dual MOSFET The Drain connection on circuit board is unnecessary, because Drains of ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Source Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Source to Source On-state Note. Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 3

TEST CIRCUIT 5 R SS(on TEST CIRCUIT 7 C iss Capacitance Capacitance Bridge Bridge S1 S1 TEST ...

Page 4

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 - Ambient Temperature - ° FORWARD BIAS SAFE OPERATING AREA 100 R Limited ...

Page 5

SOURCE CURRENT vs. SOURCE TO SOURCE VOLTAGE 60 TEST CIRCUIT 5 Pulsed 4 4 3 Source to Source Voltage - V ...

Page 6

SOURCE TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 TEST CIRCUIT 3 2 Pulsed 3 Channel ...

Page 7

Example of application circuit > LI-ion battery (1cell) protection circuit Li-ion battery pack Li-ion battery pack Li-ion Li-ion battery battery cell cell <Notes for using this device safely> When you use this device, in order to prevent a customer’s ...

Page 8

Figure 1 Recommended soldering conditions of INFRARED REFLOW Maximum temperature (Package's surface temperature) Time at maximum temperature Time of temperature higher than 220˚C Preheating time at 160 to 180˚C Maximum number of reflow processes Maximum chlorine content of rosin flux ...

Page 9

The information in this document is current as of March, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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