upa2350b Renesas Electronics Corporation., upa2350b Datasheet

upa2350b

Manufacturer Part Number

upa2350b

Description

Dual N-channel Mosfet For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2350B.pdf (7 pages)

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Document No. G19313EJ1V0DS00 (1st edition)

Date Published June 2008 NS

Printed in Japan

DESCRIPTION

Lithium-Ion battery protection circuit.

(EFLIP).

FEATURES

•

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in the external electrode and other parts.)

Remark "-E4" indicates the unit orientation (E4 only).

ABSOLUTE MAXIMUM RATINGS (T

Source to Source Voltage (V

Gate to Source Voltage (V

Source Current (DC)

Source Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. Mounted on ceramic board of 50 cm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

The

Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

Connecting the Drains on the circuit board is not required

because the Drains of the FET1 and the FET2 are internally

connected.

Monolithic Dual MOSFET

2.5 V drive available and low on-state resistance

Built-in G-S protection diode against ESD

Pb-free Bump

SS(on)1

SS(on)2

SS(on)3

SS(on)4

2. PW ≤ 100

PA2350BT1G-E4-A

PA2350B is a Dual N-channel MOSFET designed for

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

PART NUMBER

= 35 mΩ MAX. (V

= 37 mΩ MAX. (V

= 44 mΩ MAX. (V

= 55 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note1

s, Single Pulse

Note2

Note1

Note

= 0 V)

= 4.5 V, I

= 4.0 V, I

= 3.1 V, I

= 2.5 V, I

DUAL N-CHANNEL MOSFET

S(DC)

S(pulse)

SSS

GSS

stg

= 3.0 A)

= 25°C)

4-pin EFLIP

PACKAGE

x 1.0 mmt

FOR SWITCHING

DATA SHEET

−55 to +150

±12

±50

150

6.0

1.3

MOS FIELD EFFECT TRANSISTOR

°C

1-pin index mark S1

Source 1

0.08 S

OUTLINE DRAWING (Unit: mm)

Gate 1

FET1

1.47 ± 0.02

TOP VIEW

EQUIVALENT CIRCUIT

Dot area (For in-house)

PA2350B

Body Diode

0.1

0.2 ± 0.02

0.28 ± 0.03

BOTTOM VIEW

FET2

Gate 2

0.65

Source 2

S1: Source 1

G1: Gate 1

G2: Gate 2

S2: Source 2

4 -

Gate

Protection

Diode

2008

0.37

0.65

Related parts for upa2350b

upa2350b Summary of contents

Page 1

DESCRIPTION μ The PA2350B is a Dual N-channel MOSFET designed for Lithium-Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection (EFLIP). FEATURES • Monolithic Dual MOSFET Connecting the Drains on the circuit board is not required because ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Source Current I SSS Gate Leakage Current I GSS Gate to Source Cut-off Voltage V GS(off) Note Forward Transfer Admittance | y fs Source to Source On-state R SS(on)1 Note Resistance R ...

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upa2350b Renesas Electronics Corporation., upa2350b Datasheet

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