upa2450c Renesas Electronics Corporation., upa2450c Datasheet - Page 7

• Manufacturer Part Number: upa2450c
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion
Note 1. Definition of rate of distortion(written as ε in this document)
applied to the device should become below 2000
of a device may be degraded and it may result in failure.
2. The relation of the distortion and the bend changes with several conditions, such as a size of substrate and
ε = (l − l
l
l: Distance above-mentioned when receiving stress.
so on.
0
: Distance for two arbitrary points before receiving stress.
0
)/l
The substrate that mounted the device is on a stand with a support width of 24 mm.
The device is turned downward. The stress is applied from a top.
0
Support width 24 mm
6000
5000
4000
3000
2000
1000
0
Figure 3. Example of the bend and the rate of distortion
0
Stress
0.2
Figure 2. Direction of substrate and stress
Bend - mm
0.4
Data Sheet G18792EJ1V0DS
0.6
μ
ε.
Note1
0.8
If the rate of distortion exceeds 2000
Substrate: 33 x 6 mm, t = 0.5 mm, FR-4
The direction of a device:
Measurement position
Device
1
Recommended condition
Bend
Note2
μ
ε, the characteristic
μ
PA2450C
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