upa2610 Renesas Electronics Corporation., upa2610 Datasheet - Page 4

• Manufacturer Part Number: upa2610
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
-0.8
-0.6
-0.4
-20
-16
-12
150
100
-8
-4
50
-1
0
0
-0.1
-50
0
Pulsed
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
A
V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
= 125°C
DS
T
−25°C
ch
- Drain to Source Voltage - V
75°C
25°C
-0.5
- Channel Temperature - °C
0
I
D
−1.8 V
- Drain Current - A
-1
−2.5 V
-1
50
V
GS
-10
V
I
= −4.5 V
D
DS
-1.5
V
Pulsed
= −1.0 mA
100
GS
= −10.0 V
= −4.5 V
Data Sheet G16836EJ1V0DS
-100
150
-2
-0.001
-0.01
-100
-100
-0.1
-0.1
-10
-10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
150
100
-1
FORWARD TRANSFER CHARACTERISTICS
-1
50
-0.01
0
-0.1
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
T
V
Pulsed
T
A
DS
DS
A
V
= −25°C
= 125°C
= −10.0 V
GS
= −10.0 V
125°C
−25°C
-0.5
25°C
75°C
75°C
25°C
- Gate to Source Voltage - V
I
D
I
D
-0.1
- Drain Current - A
- Drain Current - A
-1
-1
-1.5
-1
-10
T
V
Pulsed
A
GS
= 125°C
µ
-2
−25°C
= −2.5 V
75°C
25°C
PA2610
-2.5
-10
-100