upa2200t1m Renesas Electronics Corporation., upa2200t1m Datasheet

upa2200t1m

Manufacturer Part Number

upa2200t1m

Description

N-channel Mos Fet For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2200T1M.pdf (6 pages)

Current page: 1 of 6
Download datasheet (161Kb)

Document No. G19445EJ1V0DS00 (1st edition)

Date Published September 2008 NS

Printed in Japan

FEATURES

• Low on-state resistance

• Built-in gate protection diode

• 4.5 V Gate drive available

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in external electrode and

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

DESCRIPTION

for power management applications of portable equipments, such as

load switch.

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 5 sec)

Channel Temperature

Storage Temperature

Notes 1. PW ≤ 10

The

DS(on)1

DS(on)2

PA2200T1M-T1-AT

PA2200T1M-T2-AT

2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

PART NUMBER

PA2200T1M is N-channel MOS Field Effect Transistor designed

= 23 mΩ MAX. (V

= 31 mΩ MAX. (V

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

other parts.)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

Note

Note2

= 0 V)

= 10 V, I

= 4.5 V, I

8 mm embossed taping

3000 p/reel

PACKING

Note2

= 8 A)

= 4 A)

N-CHANNEL MOS FET

= 25°C, All terminals are connected.)

FOR SWITCHING

DATA SHEET

D(DC)

D(pulse)

stg

DSS

GSS

8-pin VSOF (1629)

−55 to +150

0.011 g TYP.

PACKAGE

MOS FIELD EFFECT TRANSISTOR

±20

±32

150

1.1

2.5

±8

°C

0.32±0.05

PA2200T1M

PACKAGE DRAWING (Unit: mm)

0.65

0.05 S

2.9±0.1

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.05 M S A

Source

Drain

1, 2, 3, 6, 7, 8: Drain

Body

Diode

0.145±0.05

0 to 0.025

: Gate

: Source

2008

Related parts for upa2200t1m

upa2200t1m Summary of contents

Page 1

DESCRIPTION The PA2200T1M is N-channel MOS Field Effect Transistor designed μ for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance mΩ MAX DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

Related keywords

upa2200t1m datasheet
upa2200t1m data sheet
upa2200t1m pdf datasheet
upa2200t1m component
upa2200t1m part
upa2200t1m distributor
upa2200t1m RoHS
upa2200t1m datasheet download

upa2200t1m Renesas Electronics Corporation., upa2200t1m Datasheet

upa2200t1m

Related parts for upa2200t1m

upa2200t1m Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Related keywords