hsms-282r Avago Technologies, hsms-282r Datasheet - Page 4

• Manufacturer Part Number: hsms-282r
• Description: Surface Mount Rf Schottky Barrier Diodes
• Manufacturer: Avago Technologies

4
Typical Performance, T
Figure 1. Forward Current vs. Forward Voltage at
Temperatures.
Figure 4. Dynamic Resistance vs. Forward
Current.
Figure 7. Typical Output Voltage vs. Input Power,
Small Signal Detector Operating at 850 MHz.
0.001
1000
0.01
0.01
100
100
0.1
0.1
10
10
1
1
1
0.1
-40
0
T
T
T
T
DC bias = 3 A
A
A
A
A
= +125C
= +75C
= +25C
= –25C
0.10
I
F
V
F
– FORWARD CURRENT (mA)
-30
P
in
– FORWARD VOLTAGE (V)
RF in
– INPUT POWER (dBm)
1
0.20
3.3 nH
18 nH
-20
0.30
100 pF
C
HSMS-282B
10
= 25°C (unless otherwise noted), Single Diode
-10
0.40
100 K
-25C
+25C
+75C
Vo
0.50
100
0
100,000
Figure 2. Reverse Current vs. Reverse Voltage at
Temperatures.
Figure 8. Typical Output Voltage vs. Input Power,
Large Signal Detector Operating at 915 MHz.
1E-005
10,000
Figure 5. Typical V
at Mixer Bias Levels.
0.0001
0.001
1000
0.01
100
0.3
0.1
30
10
10
10
1
1
1
-20
0.2
0
+25C
0.4
-10
V
V
F
P
R
in
- FORWARD VOLTAGE (V)
– REVERSE VOLTAGE (V)
RF in
– INPUT POWER (dBm)
f
68
0.6
5
Match, Series Pairs and Quads
0
0.8
I
T
T
T
F
HSMS-282B
V
A
A
A
(Left Scale)
10
F
= +125C
= +75C
= +25C
100 pF
(Right Scale)
10
1.0
20
1.2
4.7 K
Vo
15
1.4
30
30
10
1
0.3
Figure 3. Total Capacitance vs. Reverse Voltage.
Figure 9. Typical Conversion Loss vs. L.O. Drive,
2.0 GHz (Ref AN997).
Figure 6. Typical V
Bias Levels.
100
0.8
0.6
0.4
0.2
10
10
1
9
8
7
6
1
0
0.10
0
LOCAL OSCILLATOR POWER (dBm)
0
V
V
F
R
2
- FORWARD VOLTAGE (V)
– REVERSE VOLTAGE (V)
2
0.15
f
Match, Series Pairs at Detector
4
4
V
F
6
(Right Scale)
I
0.20
F
(Left Scale)
8
6
10
0.25
12
8
1.0
0.1