si7501dn-t1 Vishay, si7501dn-t1 Datasheet - Page 7

• Manufacturer Part Number: si7501dn-t1
• Description: Complementary 30-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72173
S-51129—Rev. C, 13-Jun-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
−0.8
0.4
0.2
30
10
1
−50
0.0
−25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
− Source-to-Drain Voltage (V)
T
Threshold Voltage
J
T
− Temperature (_C)
25
J
= 150_C
0.6
I
D
50
= 250 mA
0.8
75
1.0
0.01
100
100
T
0.1
10
J
1
0.1
= 25_C
1.2
125
*V
Limited
*Limited by r
GS
I
D(on)
Single Pulse
T
A
u minimum V
150
1.4
= 25_C
V
DS
Safe Operating Area
− Drain-to-Source Voltage (V)
DS(on)
1
GS
BV
at which r
DSS
Limited
DS(on)
10
0.16
0.12
0.08
0.04
0.00
50
40
30
20
10
I
is specified
0
DM
10
0
−3
Limited
On-Resistance vs. Gate-to-Source Voltage
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
100
2
−2
V
GS
− Gate-to-Source Voltage (V)
Single Pulse Power
10
−1
4
Time (sec)
Vishay Siliconix
I
D
= 7.7 A
1
6
N−CHANNEL
Si7501DN
10
www.vishay.com
8
100
600
10
7