mmpq2907a-nl Fairchild Semiconductor, mmpq2907a-nl Datasheet

mmpq2907a-nl

Manufacturer Part Number

mmpq2907a-nl

Description

Ffb2907a / Fmb2907a / Mmpq2907a Pnp Multi-chip General Purpose Amplifier

Manufacturer

Fairchild Semiconductor

Datasheet

1.MMPQ2907A-NL.pdf (7 pages)

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1998 Fairchild Semiconductor Corporation

Symbol

CEO

CBO

EBO

Thermal Characteristics

Absolute Maximum Ratings*

, T

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

SC70-6

Mark: .2F

NOTE: The pinouts are symmetrical; pin 1 and pin

4 are interchangeable. Units inside the carrier can

be of either orientation and will not affect the

functionality of the device.

PNP Multi-Chip General Purpose Amplifier

This device is designed for use as a general purpose amplifier and switch requiring

collector currents to 500 mA. Sourced from Process 63.

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

stg

FFB2907A

Total Device Dissipation

Thermal Resistance, Junction to Ambient

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

pin #1

Effective 4 Die

Each Die

Derate above 25 C

Characteristic

Parameter

FMB2907A

SuperSOT -6

Dot denotes pin #1

= 25°C unless otherwise noted

Mark: .2F

= 25°C unless otherwise noted

pin #1

FFB2907A

300

415

2.4

FMB2907A

MMPQ2907A

SOIC-16

Max

Mark:

MMPQ2907A

700

180

5.6

-55 to +150

Value

600

5.0

pin #1

MMPQ2907A

1,000

125

240

8.0

Units

mW/ C

Units

C/W

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mmpq2907a-nl Summary of contents

Page 1

... A Parameter T = 25°C unless otherwise noted A FFB2907A 300 2.4 415 MMPQ2907A SOIC- Mark: pin #1 MMPQ2907A Value Units 5.0 V 600 mA -55 to +150 C Max Units FMB2907A MMPQ2907A 700 1,000 mW 5.6 8.0 mW/ C 180 C/W 125 C/W 240 C/W 4 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage* V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current B I Collector Cutoff Current CEX I Collector Cutoff Current CBO ON CHARACTERISTICS h DC ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 25 °C 200 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Switching Times vs Collector Current 250 200 150 100 100 I - COLLECTOR ...

Page 5

Typical Common Emitter Characteristics Common Emitter Characteristics 0.5 0.2 0 COLLECTOR CURRENT (mA) C Common Emitter Characteristics 1 -10mA 1.4 V 1.3 1.2 1.1 h ...

Page 6

Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit 0 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit PNP Multi-Chip General Purpose Amplifier ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

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