h5ps1g83nfr Hynix Semiconductor, h5ps1g83nfr Datasheet - Page 4

• Manufacturer Part Number: h5ps1g83nfr
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.1 / Feb. 2010
1. Description
1.1 Device Features & Ordering Information
1.1.1 Key Features
• VDD = 1.8 +/- 0.1V
• VDDQ = 1.8 +/- 0.1V
• All inputs and outputs are compatible with SSTL_18 interface
• 8 banks
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
• Differential Data Strobe (DQS, DQS)
• Data outputs on DQS, DQS edges when read (edged DQ)
• Data inputs on DQS centers when write (centered DQ)
• On chip DLL align DQ, DQS and DQS transition with CK transition
• DM mask write data-in at the both rising and falling edges of the data strobe
• All addresses and control inputs except data, data strobes and data masks latched on the rising
• Programmable CAS latency 3, 4, 5 and 6 supported
• Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
• Programmable burst length 4/8 with both nibble sequential and interleave mode
• Internal eight bank operations with single pulsed RAS
• Auto refresh and self refresh supported
• tRAS lockout supported
• 8K refresh cycles /64ms
• JEDEC standard 60ball FBGA(x8)
• Full strength driver option controlled by EMR
• On Die Termination supported
• Off Chip Driver Impedance Adjustment supported
• Read Data Strobe supported
• Self-Refresh High Temperature Entry
edges of the clock
H5PS1G83NFR
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