k7r321882c Samsung Semiconductor, Inc., k7r321882c Datasheet - Page 13

• Manufacturer Part Number: k7r321882c
• Description: 1mx36-bit, 2mx18-bit, 4mx9-bit Qdrtm Ii B2 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7R323682C
K7R320982C
THERMAL RESISTANCE
Note: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
PIN CAPACITANCE
Note: 1. Parameters are tested with RQ=250Ω and V
AC TEST CONDITIONS
Note: Parameters are tested with RQ=250Ω
K7R321882C
Note: For power-up, V
Overershoot Timing
Junction to Ambient
Junction to Case
Junction to Pins
Address Control Input Capacitance
Input and Output Capacitance
Clock Capacitance
Output Power Supply Voltage
Output Timing Reference Level
Core Power Supply Voltage
Input Reference Level
Input Rise/Fall Time
Input High/Low Level
V
DDQ
V
thermal impedance. T
2. Periodically sampled and not 100% tested.
DDQ
+0.25V
V
+0.5V
V
IL
DDQ
Parameter
PRMETER
PRMETER
IH
≤ V
J
DDQ
=T
20% t
A
+0.3V and V
+ P
D
KHKH
x θ
JA
(MIN)
DD
Symbol
V
T
≤ 1.7V and V
V
V
V
IH
R
DDQ
REF
DD
/T
/V
F
IL
DDQ
SYMBOL
=1.5V.
C
C
C
OUT
CLK
1Mx36 & 2Mx18 & 4Mx9 QDR
IN
DDQ
1.25/0.25
SYMBOL
1.7~1.9
1.4~1.9
0.3/0.3
V
Value
0.75
DDQ
≤ 1.4V t ≤ 200ms
θ
θ
θ
JA
JC
JB
/2
- 13 -
TESTCONDITION
Unit
Undershoot Timing
ns
V
V
V
V
V
V
V
OUT
V
IN
SS
=0V
-
V
=0V
-0.25V
SS
-0.5V
V
V
AC TEST OUTPUT LOAD
SS
IH
SRAM
20.8
Typ
2.3
4.3
Typ
3.5
V
4
3
ZQ
REF
20% t
Rev. 1.1 August 2006
250Ω
0.75V
Max
KHKH
4
5
4
(MIN)
TM
Zo=50Ω
°C
°C
°C
Unit
/W
/W
/W
II b2 SRAM
Unit
pF
pF
pF
V
DDQ
NOTES
NOTES
/2
50Ω