stl12n65m5 STMicroelectronics, stl12n65m5 Datasheet - Page 5

• Manufacturer Part Number: stl12n65m5
• Description: N-channel 650 V, 0.390 , 8.5 A Powerflattm 8x8 Hv Ultra Low Gate Charge Mdmeshtm V Power Mosfet
• Manufacturer: STMicroelectronics

STL12N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
I
I
SD
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
t
rr
rr
c
r
f
rr
rr
(2)
(1)
Turn-off delay time
Rise time
Cross time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 17450 Rev 1
I
I
V
I
V
(see
V
R
(see
(see
SD
SD
SD
DD
DD
DD
G
= 8.5 A, V
= 8.5 A, di/dt = 100 A/µs
= 8.5 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 100 V (see
= 100 V, T
= 400 V, I
Figure
Figure
Figure
Test conditions
Test conditions
4)
4),
7)
GS
GS
D
j
= 150 °C
= 5 A,
= 10 V
= 0
Figure
4)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
230
280
2.2
2.7
9.5
19
19
28
24
34
Max. Unit
Max
8.5
1.5
34
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
5/11
A
A
V
A
A