cph3417 Sanyo Semiconductor Corporation, cph3417 Datasheet - Page 2

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cph3417

Manufacturer Part Number
cph3417
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Continued from preceding page.
Switching Time Test Circuit
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
400
350
300
250
200
150
100
2.0
1.6
1.2
0.8
0.4
50
0
0
0
0
I D =0.5A
0.1
PW=10 s
D.C. 1%
Parameter
4V
0V
P.G
0.2
Drain-to-Source Voltage, V DS -- V
2
V IN
Gate-to-Source Voltage, V GS -- V
1.0A
0.3
R DS (on) -- V GS
V IN
I D -- V DS
0.4
50
4
G
0.5
V DD =10V
0.6
6
D
Symbol
t d (on)
t d (off)
Coss
Ciss
Crss
V SD
Qgs
Qgd
Qg
S
0.7
t r
t f
I D =1A
R L =10
0.8
CPH3417
8
Ta=25 C
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =10V, V GS =10V, I D =1.8A
V DS =10V, V GS =10V, I D =1.8A
V DS =10V, V GS =10V, I D =1.8A
I S =1.8A, V GS =0
V OUT
0.9
IT02983
IT02985
CPH3417
1.0
10
Conditions
400
350
300
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
50
0
0
--60
0
V DS =10V
--40
0.2
--20
0.4
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
0
0.6
min
R DS (on) -- Ta
20
I D -- V GS
0.8
40
Ratings
1.0
typ
60
0.91
100
5.5
4.5
0.4
0.4
22
15
18
17
1.2
8
80
1.4
100
max
1.2
1.6
120
No.7124-2/4
1.8
140
IT02984
IT03880
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
160
2.0

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