cph3004 Sanyo Semiconductor Corporation, cph3004 Datasheet

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cph3004

Manufacturer Part Number
cph3004
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN7606
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : GD
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
High gain-bandwidth product
: f T =8.5GHz typ (V CE =3V).
High current : (I C =100mA).
Ultrasmall-sized package permitting applied sets to be
made small and slim.
Large collector dissipation (600mW max).
Parameter
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
S21e
S21e
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
Cre
P C
f T 1
f T 2
NF
I C
Tj
High-Frequency Medium-Power Amplifier
2
2
1
2
Mounted on a ceramic board (250mm
V CB =5V, I E =0
V EB =1V, I C =0
V CE =1V, I C =10mA
V CE =1V, I C =10mA
V CE =3V, I C =30mA
V CB =1V, f=1MHz
V CB =1V, f=1MHz
V CE =1V, I C =10mA, f=1GHz
V CE =3V, I C =30mA, f=1GHz
V CE =1V, I C =10mA, f=2GHz
CPH3004
Conditions
Package Dimensions
unit : mm
2152A
Conditions
1
NPN Epitaxial Planar Silicon Transistor
2
3
0.8mm)
2.9
1.9
2
0.4
[CPH3004]
min
100
4.0
6.5
6.5
8.5
22004 TS IM TA-100471
Applications
Ratings
typ
Ratings
10.5
6.0
8.5
1.2
0.9
8.5
1.7
CPH3004
0.15
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
--55 to +150
max
0.05
100
600
150
180
1.0
1.6
2.5
10
9
6
2
No7606-1/7
GHz
GHz
Unit
mW
mA
Unit
pF
pF
dB
dB
dB
V
V
V
C
C
A
A

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cph3004 Summary of contents

Page 1

... =3V =30mA Cob V CB =1V, f=1MHz Cre V CB =1V, f=1MHz S21e =1V =10mA, f=1GHz S21e =3V =30mA, f=1GHz =1V =10mA, f=2GHz CPH3004 Applications [CPH3004] 2.9 0.15 0.4 3 0. Gate 2 : Source 3 : Drain SANYO : CPH3 Ratings Unit ...

Page 2

... Collector-to-Base Voltage S21e -- 1.0 Collector Current CPH3004 100 0.1 0.2 0.3 4 Base-to-Emitter Voltage IT02230 1 100 1 ...

Page 3

... CPH3004 120 140 160 IT06433 3.231 160.58 0.070 3.007 143.13 0.128 2.419 115.52 0.202 1.956 94.77 0.229 1.616 78 ...

Page 4

... CPH3004 17.497 131.23 0.049 11.137 109.54 0.072 6.097 90.05 0.107 4.195 79.00 0.145 3.212 70.03 0.184 2.631 62.31 0.225 2.248 55.35 ...

Page 5

... CPH3004 3.509 162.08 0.056 3.287 145.80 0.102 2.708 119.55 0.166 2.209 99.43 0.191 1.827 83.44 0.198 1.580 70.43 0.197 1.367 59 ...

Page 6

... CPH3004 23.526 125.40 0.034 14.022 105.79 0.053 7.483 89.06 0.091 5.102 79.42 0.130 3.893 71.30 0.169 3.160 64.48 0.209 2.680 58.00 0.248 2 ...

Page 7

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. CPH3004 PS No7606-7/7 ...

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