mch3459 Sanyo Semiconductor Corporation, mch3459 Datasheet - Page 2

• Manufacturer Part Number: mch3459
• Description: N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm
2167A
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
700
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0
I D =0.5A
(Bottom view)
0.65
0.1
2
Parameter
2
2.0
3
0.2
Drain-to-Source Voltage, V DS -- V
0.3
4
Gate-to-Source Voltage, V GS -- V
1
0.3
R DS (on) -- V GS
6
I D -- V DS
0.4
8
1
(Top view)
0.5
10
3
0.15
2
0.6
12
Symbol
V SD
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Qgs
Qgd
Qg
0.7
14
0.8
V GS =2.5V
16
Ta=25 C
V DS =10V, V GS =10V, I D =1.8A
V DS =10V, V GS =10V, I D =1.8A
V DS =10V, V GS =10V, I D =1.8A
I S =1.8A, V GS =0
0.9
18
IT07277
IT07281
MCH3459
1.0
20
Conditions
500
450
400
350
300
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Switching Time Test Circuit
P.G
50
10V
0
0
--60
0V
0
PW=10 s
D.C. 1%
V DS =10V
V IN
--40
0.5
--20
Gate-to-Source Voltage, V GS -- V
1.0
V IN
Ambient Temperature, Ta -- C
0
50
G
min
1.5
R DS (on) -- Ta
20
I D -- V GS
2.0
V DD =15V
40
D
Ratings
typ
S
60
2.5
0.74
0.42
0.93
I D =1A
R L =15
3.2
MCH3459
80
3.0
max
V OUT
100
1.2
3.5
120
No.8110-2/4
4.0
140
IT07279
Unit
IT07283
nC
nC
nC
V
160
4.5