mch3007 Sanyo Semiconductor Corporation, mch3007 Datasheet - Page 2

• Manufacturer Part Number: mch3007
• Description: Npn Epitaxial Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Forward Transfer Gain
Noise Figure
1000
100
1.0
0.1
10
30
25
20
15
10
7
5
3
2
5
0
7
5
3
2
7
5
3
2
0.1
0.1
0
2
2
Parameter
Collector-to-Emitter Voltage, V CE -- V
3
3
2
Collector-to-Base Voltage, V CB -- V
5 7
5
Collector Current, I C -- mA
7
1.0
1.0
4
Cre -- V CB
h FE -- I C
I C -- V CE
2
2
3
3
6
5 7
5 7
I CBO
I EBO
h FE
f T
| S21e |
NF
10
10
Symbol
8
2
2
2
I B =0μA
10
3
3
V CE =5V
f=1MHz
V CB =5V, I E =0A
V EB =1V, I C =0A
V CE =5V, I C =5mA
V CE =5V, I C =10mA
V CE =5V, I C =10mA, f=1GHz
V CE =5V, I C =10mA, f=1GHz
IT16314
IT16310
IT16312
5 7 100
5 7
100
12
MCH3007
Conditions
100
1.0
0.1
1.0
10
10
30
25
20
15
10
5
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
1.0
0
V CE =5V
2
2
3
Collector-to-Base Voltage, V CB -- V
0.2
Base-to-Emitter Voltage, V BE -- V
5
3
Collector Current, I C -- mA
7
1.0
min
5
Cob -- V CB
0.4
I C -- V BE
f T -- I C
60
6
9
7
2
3
10
Ratings
typ
5 7 10
0.6
1.2
12
8
2
max
3
2
150
0.8
No. A1925-2/10
1.0
1.0
1.8
3
V CE =5V
f=1MHz
f=1GHz
5
IT16311
IT16313
IT16315
5 7
7
GHz
Unit
μA
μA
dB
dB
100
100
1.0