cph6329 Sanyo Semiconductor Corporation, cph6329 Datasheet

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cph6329

Manufacturer Part Number
cph6329
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CPH6329
Manufacturer:
Sanyo
Quantity:
39 000
Part Number:
cph6329-TL-E
Manufacturer:
Sanyo
Quantity:
225 000
Ordering number : ENN8001
CPH6329
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : YF
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V GSS
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =
V DS =
V GS = 8V, V DS =0
V DS =
V DS =
I D =
I D =
V DS =
V DS =
V DS =
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--
--
--
1mA, V GS =0
1.0A, V GS =
0.5A, V GS =
--
--
--
--
--
--
CPH6329
30V, V GS =0
10V, I D =
10V, I D =
10V, f=1MHz
10V, f=1MHz
10V, f=1MHz
--
- -
Conditions
--
--
1mA
1.0A
4V
2.5V
Conditions
2
0.8mm)
min
--
--
N2504 TS IM TA-101102
0.4
1.4
30
Ratings
typ
Ratings
215
290
285
2.4
52
38
10
33
28
33
--55 to +150
Continued on next page.
max
--2.0
--8.0
--
--
150
1.2
280
410
30
10
1.4
10
--
1
No.8001-1/4
Unit
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A

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cph6329 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN CPH6329 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... --15V -- --1. PW= --10V 0 0 --0.5 --1.0 --1.5 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature Unit 1 =15 V OUT CPH6329 --2.0 --2.5 IT07535 120 140 160 IT07694 No.8001-2/4 ...

Page 3

... Drain Current --4 --10V --2.0A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature CPH6329 -- --1 --0 --0. --0.001 --1.0 --0.4 IT07538 1000 --15V --4V 5 ...

Page 4

... Note on usage : Since the CPH6329 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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