cph6539 Sanyo Semiconductor Corporation, cph6539 Datasheet - Page 2

• Manufacturer Part Number: cph6539
• Description: Npn Epitaxial Planar Silicon Transistor
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
INPUT
PW=20μs
D.C.
0
0
50Ω
≤
1%
0.1
Parameter
V R
V BE = --5V
20I B 1= --20I B 2=I C =750mA
Collector-to-Emitter Voltage, V CE -- V
40mA
0.2
0.3
I B1
R B
100μF
I B2
+
I C -- V CE
0.4
0.5
470μF
V CC =12V
+
0.6
I CBO
I EBO
h FE
f T
Cob
V BE (sat)
V (BR)CBO
V (BR)EBO
t on
t stg
t f
V CE (sat)
V (BR)CEO
Symbol
OUTPUT
R L
16Ω
0.7
8mA
0.8
I B =0mA
V CB =30V, I E =0A
V EB =4V, I C =0A
V CE =2V, I C =100mA
V CE =10V, I C =300mA
V CB =10V, f=1MHz
I C =750mA, I B =15mA
I C =750mA, I B =15mA
I C =10μA, I E =0A
I C =1mA, R BE =∞
I E =10μA, I C =0A
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
0.9
2mA
IT15612
1.0
CPH6539
Conditions
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.1
0.2
Base-to-Emitter Voltage, V BE -- V
0.3
min
0.4
I C -- V BE
200
40
30
5
0.5
Ratings
0.6
typ
0.85
500
160
205
35
30
0.7
8
0.8
max
560
250
0.1
0.1
1.2
0.9
No. A1756-2/4
V CE =2V
1.0
IT15613
MHz
Unit
mV
μA
μA
pF
ns
ns
ns
V
V
V
V
1.1