MSD-601ST1G ONSEMI [ON Semiconductor], MSD-601ST1G Datasheet - Page 2

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MSD-601ST1G

Manufacturer Part Number
MSD-601ST1G
Description
NPN General Purpose Amplifier Transistors Surface Mount
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector − Emitter Breakdown Voltage
Collector − Base Breakdown Voltage
Emitter − Base Breakdown Voltage
Collector − Base Cutoff Current
Collector − Emitter Cutoff Current
DC Current Gain (Note 1)
Collector − Emitter Saturation Voltage
MSD−601RT1
MSD−601RT1G
MSD−601ST1
MSD−601ST1G
(I
(I
(I
(V
(V
(V
(V
(I
C
C
E
C
CB
CE
CE
CE
= 10 mAdc, I
= 2.0 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 45 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 2.0 Vdc, I
MSD601−RT1
MSD601−ST1
Device
C
E
E
B
C
B
C
= 0)
= 0)
B
= 0)
= 0)
= 2.0 mAdc)
= 0)
= 100 mAdc)
= 10 mAdc)
Characteristic
(T
A
= 25°C)
MSD601−RT1, MSD601−ST1
http://onsemi.com
2
(Pb−Free)
(Pb−Free)
Package
SC−59
SC−59
SC−59
SC−59
V
V
V
Symbol
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
h
h
CE(sat)
CBO
CEO
FE1
FE2
3000 Units / Reel
3000 Units / Reel
3000 Units / Reel
3000 Units / Reel
Min
210
290
50
60
70
90
Shipping
Max
100
340
460
0.1
0.5
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc

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