STT3585_12 SECOS [SeCoS Halbleitertechnologie GmbH], STT3585_12 Datasheet - Page 3

• Manufacturer Part Number: STT3585_12
• Description: 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

http://www.SeCoSGmbH.com/
03-Jan-2012 Rev. C
ELECTRICAL CHARACTERISTICS
Notes:
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
1
2
3
Pulse width limited by Max. junction temperature.
Pulse width≦300μs, duty cycle≦2%.
Surface mounted on 1 in
Elektronische Bauelemente
Parameter
1
2
copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Symbol
(T
V
T
Q
J
SD
RR
rr
= 25°C unless otherwise specified)
Source-Drain Diode
Min.
-
-
-
-
-
-
N And P-Channel Enhancement Mode Power MOSFET
Typ.
16
20
15
8
-
-
Max.
-1.2
1.2
-
-
-
-
-2.5A, -20V, R
3.5A, 20V, R
Unit
nC
ns
V
STT3585
Any changes of specification will not be informed individually.
I
I
I
I
I
I
S
S
S
S
S
S
=1.2A, V
= -1.2A, V
=3A, V
= -2A, V
=3A, V
= -2A, V
DS(ON)
DS(ON)
Test Conditions
GS
GS
GS
GS
75m
160m
GS
=0 ,dI/dt=100A/μs
=0 ,dI/dt=100A/μs
GS
=0 ,dI/dt=100A/μs
=0 ,dI/dt=100A/μs
=0
=0
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