STT3981_10 SECOS [SeCoS Halbleitertechnologie GmbH], STT3981_10 Datasheet - Page 5

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STT3981_10

Manufacturer Part Number
STT3981_10
Description
P-Channel Enhancement Mode Mos.FET
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
10-Feb-2010 Rev. C
0.01
0.01
Elektronische Bauelemente
0.1
0.1
2
1
2
1
10
10
4 -
4 -
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-
Single Pulse
3
10
-
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-
2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
-
2
10
-
1
P-Channel Enhancement Mode Mos.FET
10
-1.6 A, -20 V, RDS(ON) 180 mΩ
1
-
1
STT3981
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
-
T
A
t
1
1
= P
t
2
DM
Z
thJA
thJA
100
t
t
(t)
1
2
= 132 C/W
600
10
Page 5 of 5

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