STT4443 SECOS [SeCoS Halbleitertechnologie GmbH], STT4443 Datasheet - Page 2

• Manufacturer Part Number: STT4443
• Description: -2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

http://www.SeCoSGmbH.com/
02-Dec-2011 Rev. B
ELECTRICAL CHARACTERISTICS
Notes:
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage Current
Drain-Source Leakage Current
Drain-Source On-Resistance
Forward Transconductance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1. Pulse width limited by Max. junction temperature.
2. Pulse test
3. Surface mounted on 1 in
Elektronische Bauelemente
Parameter
2
2
2
2
2
copper pad of FR4 board, t≦5sec; 180°C/W when mounted on Min. copper pad.
2
Symbol
R
(T
BV
V
T
T
C
Q
I
I
DS(ON)
C
Q
Q
C
V
T
GS(th)
Rg
GSS
DSS
g
Q
d(on)
T
d(off)
T
A
oss
RR
rss
SD
RR
DSS
iss
fs
gs
gd
=25°C unless otherwise specified)
g
r
f
Source-Drain Diode
Min.
-30
-1
Dynamic
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Static
Typ.
0.78
260
1.6
7.5
4.3
15
55
44
15
4
3
7
6
7
-
-
-
-
-
-
-
-
P-Channel Enhancement Mode MOSFET
Max.
±
-2.5
-1.2
120
170
-25
100
-1
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-2.3A , -30V , R
Unit
mΩ
nC
nS
nC
nA
μA
pF
ns
Ω
V
V
S
V
STT4443
Any changes of specification will not be informed individually.
V
V
V
V
V
V
V
V
V
V
I
V
V
R
R
I
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/μs
D
D
S
S
GS
DS
GS
DS
DS
GS
GS
DS
DS
GS
DS
GS
GS
DS
G
D
= -0.9A, V
= -2A, V
= -2A
= -1A
=15Ω,
=3.3Ω,
=V
= -30V, V
= -24V, V
= -5V, I
= -25V,
= -15V,
= -25V,
=0, I
=
= -10V, I
= -4.5V, I
= -4.5V,
= -5V,
=0,
DS(ON)
±
GS
20V
Teat Conditions
D
, I
= -250uA
GS
D
D
120 m
= -250uA
GS
= -2A
=0
D
D
GS
GS
= -2A
= -1A
=0
=0
=0
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