STP10NK70ZFP_07 STMICROELECTRONICS [STMicroelectronics], STP10NK70ZFP_07 Datasheet - Page 4

• Manufacturer Part Number: STP10NK70ZFP_07
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

2 Electrical characteristics
Table 7.
Table 8.
(1) I
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) C
(6)The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but
4/13
I
V
SDM
Symbol
Symbol
SD
to 80%V
also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this
respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
SD
BV
Note
oss eq.
I
RRM
I
Q
Note
Note
SD
t
GSO
rr
8.6 A, di/dt 200A/µs, V
rr
6
is defined as a constant equivalent capacitance giving the same charging time as C
DSS
4
2
Source drain diode
Gate-source zener diode
Source-drain Current
Source-drain Current (pulsed)
Forward on Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Gate-Source
Breakdown Voltage
Parameter
Parameter
DD
V
(BR)DSS
Igs=±1mA
(Open Drain)
, T
Test Conditions
j
T
I
I
V
JMAX
SD
SD
DD
=8.6 A, V
=9A, di/dt = 100A/µs,
=35 V, Tj=150°C
Test Conditions
GS
=0
Min.
30
STP10NK70Z - STP10NK70ZFP
Min.
Typ.
oss
when V
Typ.
720
5.4
15
DS
Max.
increases from 0
Max.
8.6
1.6
34
Unit
Unit
µC
V
ns
A
A
V
A