BYT08P-400_02 STMICROELECTRONICS [STMicroelectronics], BYT08P-400_02 Datasheet - Page 4

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BYT08P-400_02

Manufacturer Part Number
BYT08P-400_02
Description
FAST RECOVERY RECTIFIER DIODES
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
BYT08P-400 / BYT08PI-400
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
0.5
0.2
0.1
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
30
28
26
24
22
20
18
16
14
12
10
Fig. 9: Recovery current versus dI
10
4/7
8
6
4
2
0
1E-3
10
1
C(pF)
IRM(A)
K=[Zth(j-c)/Rth(j-c)]
= 0.5
90% confidence
= 0.2
= 0.1
Single pulse
Tj=100°C
IF=IF(av)
20
1E-2
dIF/dt(A/µs)
10
VR(V)
tp(s)
50
1E-1
F
/dt (per diode).
100
=tp/T
100
T
F=1MHz
Tj=25°C
tp
1E+0
200
200
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
100.0
Fig. 8: Recovery charges versus dI
diode).
250
200
150
100
Fig. 10: Transient peak forward voltage versus
dI
30
25
20
15
10
10.0
50
5
0
F
0
1.0
0.1
0
VFP(V)
10
/dt (per diode)
Qrr(nC)
0.0
90% confidence
IFM(A)
Tj=100°C
IF=IF(av)
90% confidence
Tj=100°C
IF=IF(av)
0.5
100
20
Typical values
Tj=100°C
1.0
200
dIF/dt(A/µs)
dIF/dt(A/µs)
Tj=100°C
1.5
VFM(V)
Tj=25°C
50
300
2.0
2.5
100
400
F
3.0
/dt (per
200
500
3.5

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